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2017 IEEE 12th International Conference on asic

作者： Zhongshan Zheng Zhentao Li Gengsheng Chen Jiajun Luo Zhengsheng Han Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Silicon Device Technology Chinese Academy of Sciences State Key Laboratory of ASIC and System Fudan University

ISBN: (纸本)9781509066261;9781509066254

The impacts of the gate length and width of the transistors on the single event upset(SEU) hardness of static random access memory(SRAM) cells has been investigated by SPICE simulations,biased on a partially depleted(PD) silicon-on-insulator(SOI) CMOS *** results show that increasing the gate width can dramatically enhance the linear energy transfer(LET) threshold of SEU,as compared with increasing the gate length.A new parameter,unit gate area LET threshold,is introduced for characterizing the change in efficiency of improving the SEU resistance with increasing the gate length and width of the transistors in a *** effect of decoupling capacitors on cell SEU LET threshold is also presented by making a comparison with that of the transistors with increased gate lengths.

关键词： SEU Roles of the Gate Length and Width of the Transistors in Increasing the Single Event Upset Resistance of SRAM cells

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Heterogeneous Computing for CNN 12

Heterogeneous Computing for CNN

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2017 IEEE 12th International Conference on asic

作者： Huizi Zhang Chang Wu Xiao Hu School of Microelectronics Fudan University State Key Laboratory of ASIC and Systems Intel Asia-Pacific Research & Development

ISBN: (纸本)9781509066261;9781509066254

As a typical machine learning algorithm,convolutional neural network(CNN) has drawn great interests in academic research and industrial ***,traditional CPU can no longer meet the computation requirement of CNN due to CPU's sequential computing *** computing combines CPU together with GPGPU or FPGAs to form a much more powerful computation *** this paper,we present our study on an implementation of CNN on heterogeneous computing systems,and it shows more than 3 x runtime *** study shows systematically combine the high speed of CPU and parallel computing of FPGA,one can achieve better computation speed than CPU or FPGA *** also propose a systematic analysis method to partition an algorithm into software implementation(on CPU) and hardware implementation(on FPGA) and derive near optimal solution for heterogeneous computing.

关键词： heterogeneous computing HW/SW partitioning

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Charge-Transfer-Induced Interfacial Exchange Coupling at the Co/BiFeO3 Interface

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Physical Review Applied 2019年第4期12卷 044010-044010页

作者： Jianwei Meng Kai Chen Yimin Mijiti Dongfang Chen Fadi Choueikani Zhiqiang Zou Lingling Wang Gang Mu Wenping Geng Qingyu Kong Anquan Jiang Xi-Jing Ning Tsu-Chien Weng Institute of modern physics Fudan University Shanghai 200433 China High Pressure for Science & Technology Advanced Research Shanghai 201203 China School of Physical Science and Technology ShanghaiTech University Shanghai 201210 China SOLEIL l’Orme des Merisiers St. Aubin BP48 91192 Gif sur Yvette Cedex France Helmholtz-Zentrum Berlin für Materialien und Energie Albert-Einstein-Straße 15 12489 Berlin Germany State Key Laboratory of ASIC and system School of Microelectronics Fudan University Shanghai 200433 China State Key Laboratory of Functional Materials for informatics Shanghai Institute of Microsystem and information Technology Chinese Academy of Sciences Shanghai 200050 China Science and Technology on Electronic Test and Measurement Laboratory North University of China Taiyuan 030051 China

The interplay between ferroelectricity and magnetism in multiferroic materials is of great scientific and technological interest, allowing magnetic control of ferroelectric properties and electric control of magnetic properties through the magnetoelectric coupling from interfacial strain, exchange bias, or charge-transfer process. We report the charge transfer at the Co/BiFeO3 interface from which the interfacial exchange coupling is achieved with the formation of Fe2+. The x-ray linear dichroism and x-ray magnetic circular dichroism results reveal that the strain as well as the exchange coupling Jex in BiFeO3 (BFO) with periodic 109° domains are stronger than that in BFO with 71° domains, resulting in the higher coercive field of Co/BFO with 109° domain samples. The possible electric field control of the charge-transfer process at the Co/BFO interface enables an alternative class of electrically controllable magnetization, exchange bias, and giant magnetoresistive response of spintronic devices.

关键词： Exchange interaction Ferroelectricity Magnetoelectric effect Spintronics Strain Surface & interfacial phenomena Magnetic multilayers Multiferroics

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Nanosecond Characterization of Regional Domain Imprint from Fast Domain Switching Currents in Pb(Zr,Ti)O_3 Thin Films

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Chinese Physics Letters 2016年第2期33卷 122-124页

作者：江钧江安全 State Key Laboratory of ASIC and System School of MicroelectronicsFudan University

The traditional imprint characterization of ferroelectric thin films estimates imprint time dependence of the mean coercive voltage of all domains from a polarization-voltage hysteresis loop, which shows a semilogarithmic time dependence above an initial imprint time of το 〉 1 μs at room temperature. Below το, the imprint effect is believed to be weak. In consideration of region-by-region domain reversal under a rising pulsed voltage with ordered coercive voltages increasing from zero up to the maximum applied voltage during capacitor charging time, we can estimate the imprinted coercive voltage of each domain from domain switching current transient separately with imprint time as short as 20ns. In disagreement with the previous observations, all imprinted coercive voltages for the domains in Pt/Pb（Zr0.4 Ti0.6）O3/Pt thin-film capacitors show step-like increases at two characteristic times of 300ns and 0.27s. The imprint effect is surprisingly strong enough even at shortened time down to 20ns without any evidence of weakening.

关键词： of from in Ti

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Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited ZnO-Channel/Al_2O_3-Dielectric

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Chinese Physics Letters 2016年第5期33卷 131-134页

作者：王有航马倩郑丽丽刘文军丁士进卢红亮张卫 State Key Laboratory of ASIC and System School of MicroelectronicsFudan University

High-performance thin-film transistors （TFTs） with a low thermal budget are highly desired for flexible electronic applications. In this work, the TFTs with atomic layer deposited ZnO-channel/Al2O3-dielectric are fabricated under the maximum process temperature of 200℃. First, we investigate the effect of post-annealing environment such as N2, H2-N2 （4%） and O2 on the device performance, revealing that o2 annealing can greatly enhance the device performance. Further, we compare the influences of annealing temperature and time on the device performance. It is found that long anneMing at 200℃is equivalent to and even outperforms short annealing at 300℃. Excellent electrical characteristics of the TFTs are demonstrated after 02 anneMing at 200℃ for 35 rain, including a low off-current of 2.3 × 10-13 A, a small sub-threshold swing of 245 m V/dec, a large on/off current ratio of 7.6×10s, and a high electron effective mobility of 22.1cm2/V.s. Under negative gate bias stress at -10 V, the above devices show better electrical stabilities than those post-annealed at 300℃. Thus the fabricated high-performance ZnO TFT with a low thermal budget is very promising for flexible electronic applications.

关键词： ZnO in of Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited ZnO-Channel/Al2O for TFT with Al on

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Thermal Stress and Reliability Analysis of TSV-Based 3-D ICs With a Novel Adaptive Strategy Finite Element Method

Thermal Stress and Reliability Analysis of TSV-Based 3-D ICs...

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作者： Zhou, Hao Zhu, Hengliang Cui, Tao Pan, David Z. Zhou, Dian Zeng, Xuan State Key Laboratory of ASIC and Systems Department of Microelectronics Fudan University Shanghai200433 China State Key Laboratory of Scientific and Engineering Computing National Center for Mathematics and Interdisciplinary Sciences Institute of Computational Mathematics Academy of Mathematics and System Sciences Chinese Academy of Sciences Beijing100190 China Department of Electrical and Computer Engineering University of Texas at Austin AustinTX78712 United States Department of Electrical Engineering University of Texas at Dallas RichardsonTX75080 United States

Thermomechanical stress is one of the most important issues in performance and reliability analysis of through silicon via-based 3-D integrated circuits (3-D ICs), where an accurate numerical approach is generally needed to produce stress models and identify weak points in the structure. In this paper, we propose a knowledge-oriented nonuniform (KONU) refinement strategy for 3-D IC stress simulation under the framework of a parallel adaptive finite element method (FEM), and apply it in 3-D IC stress and reliability analysis. Parallel adaptive FEM is promising for solving large-scale problems due to its high accuracy and parallel efficiency. It produces refined meshes based on the a posteriori error analysis, which has the quasi-optimal convergence rate for solving the problem. It has high parallel efficiency, which makes it suitable for handling large and complex structures in 3-D ICs. The KONU refinement strategy developed in this paper can efficiently reduce the number of refinement iterations in parallel adaptive FEM for 3-D IC thermomechanical stress simulation and improves the computational efficiency. It is demonstrated in this paper through several examples that parallel adaptive FEM for thermomechanical stress evaluation can be widely applied in 3-D IC reliability analysis, where accurate stress simulation and modeling is exceptionally important to produce accurate results. © 2018 IEEE.

关键词： Reliability analysis

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Chinese Named Entity Recognition in Power Domain Based on Bi-LSTM-CRF

Chinese Named Entity Recognition in Power Domain Based on Bi...

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作者： Zhenqiang Zhao Zhenyu Chen Jinbo Liu Yunhao Huang Xingyu Gao Fangchun Di Lixin Li Xiaohui Ji School of Information Engineering China University of Geosciences Beijing Key Laboratory of Research and System Evaluation of Power Dispatching Automation Technology(China Electric Power Research Institute) Big Data Center State Grid Corporation of China Power Dispatching and Control Center State Grid Corporation of China Institute of Microelectronics Chinese Academy of Sciences

Efficient recognition of proprietary entities is an important basic work for text data mining and intelligent application in power *** power domain Named Entity Recognition(NER) methods rely on feature engineering seriously,which unable to learn power entity features *** order to learn entity features automatically and extract power domain named entities efficiently,a model based on Bidirectional Long Short-Term Memory Neural Networks(Bi-LSTM) and Conditional Random Field(CRF) was proposed in this *** representations were fed into the neural networks as an additional feature and Skip-gram embeddings were trained on power domain *** results showed the precision rate reaches higher than 88.25% and the recalling rate reaches higher than 88.04%,which confirm the method based on BiLSTM and CRF is effective for named entity recognition in the power domain.

关键词： Named Entity Recognition Power Domain Bi-LSTM CRF

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Memory Devices: Symmetric Ultrafast Writing and Erasing Speeds in Quasi‐Nonvolatile Memory via van der Waals Heterostructures (Adv. Mater. 11/2019)

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Advanced Materials 2019年第11期31卷

作者： Jingyu Li Lan Liu Xiaozhang Chen Chunsen Liu Jianlu Wang Weida Hu David Wei Zhang Peng Zhou ASIC & System State Key Lab School of Microelectronics Fudan University Shanghai 200433 China State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China

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Analytical Models for Channel Potential and Drain Current in AlGaN/GaN HEMT Devices 12

Analytical Models for Channel Potential and Drain Current in...

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2017 IEEE 12th International Conference on asic

作者： Haisheng Qian Guangxi Hu Laigui Hu Xing Zhou Ran Liu Lirong Zheng State Key laboratory of ASIC and system School of Information Science and TechnologyFudan University The School of Electrical and Electronic Engineering Nanyang Technological University

Analytical models for channel potential and drain current in Al Ga N/Ga N HEMT devices are *** analytical model results are verified against simulations,good agreements are *** explicit expression for drain current ma... 详细信息

ISBN: (纸本)9781509066261;9781509066254

关键词： Analytical Models for Channel Potential and Drain Current in AlGaN/GaN HEMT Devices AlGaN

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Towards chirality control of graphene nanoribbons embedded in hexagonal boron nitride

arXiv

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arXiv 2020年

作者： Wang, Hui Shan Chen, Lingxiu Elibol, Kenan He, Li Wang, Haomin Chen, Chen Jiang, Chengxin Li, Chen Wu, Tianru Cong, Chun Xiao Pennycook, Timothy J. Argentero, Giacomo Zhang, Daoli Watanabe, Kenji Taniguchi, Takashi Wei, Wenya Yuan, Qinghong Meyer, Jannik C. Xie, Xiaoming State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai200050 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China Faculty of Physics University of Vienna Boltzmanngasse 5 Vienna1090 Austria School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan430074 China School of Physical Science and Technology ShanghaiTech University Shanghai201210 China Shanghai200050 China Department of Lithospheric Research University of Vienna Althanstrasse 14 Vienna1090 Austria State Key Laboratory of ASIC & System School of Information Science and Technology Fudan University Shanghai200433 China National Institute for Materials Science 1-1 Namiki Tsukuba305-0044 Japan State Key Laboratory of Precision Spectroscopy School of Physics and Material Science East China Normal University Shanghai200062 China Centre for Theoretical and Computational Molecular Science Australian Institute for Bioengineering and Nanotechnology University of Queensland BrisbaneQLD4072 Australia School of Chemistry Trinity College Dublin CRANN - Advanced Microscopy Laboratory Unit 27/29 Trinity Enterprise CentrePearse St Dublin 2 Ireland University Antwerpen Groenenborgerlaan 171 Antwerpen2020 Belgium Institute for Applied Physics and Natural and Medical Sciences Institute University of Tübingen Tübingen Germany

The integrated in-plane growth of two dimensional materials (e.g. graphene and hexagonal boron nitride (h-BN)) with similar lattices, but distinct electrical properties, could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge-specific graphene nanoribbons (GNR) in the lattice of h-BN still remains an enormous challenge for present approaches. Here we developed a two-step growth method and successfully achieved sub-5 nm-wide zigzag and armchair GNRs embedded in h-BN, respectively. Further transport measurements reveal that the sub-7 nm-wide zigzag GNRs exhibit openings of the band gap inversely proportional to their width, while narrow armchair GNRs exhibit some fluctuation in the bandgap-width relationship. Transistors made of these GNRs with large bandgaps (>0.4 eV) exhibit excellent electronic performance even at room temperature (e.g. conductance on-off ratio more than 105 and carrier mobility more than 1,500 cm2 V−1 s−1). An obvious conductance peak is observed in the transfer curves of 8-10 nm-wide zigzag GNRs while it is absent in most of armchair GNRs of similar width. Magneto-transport experiments show that zigzag GNRs exhibit relatively small magneto-conductance (MC) while armchair GNRs have much higher MC than zigzag GNRs. This integrated lateral growth of edge-specific GNRs in h-BN brings semiconducting building blocks to atomically thin layer, and will provide a promising route to achieve intricate nanoscale electrical circuits on high-quality insulating h-BN substrates. Copyright © 2020, The Authors. All rights reserved.

关键词： Boron nitride

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