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Revealing the Microscopic Mechanism of Elementary Vortex Pinning in Superconductors

Physical Review X 2024年第4期14卷 041039页

作者： C. Chen Y. Liu Y. Chen Y. N. Hu T. Z. Zhang D. Li X. Wang C. X. Wang Z. Y. W. Lu Y. H. Zhang Q. L. Zhang X. L. Dong R. Wang D. L. Feng T. Zhang Department of Physics State Key Laboratory of Surface Physics and Advanced Material Laboratory Zhejiang Institute of Photoelectronics and Zhejiang Institute for Advanced Light Source Beijing National Laboratory for Condensed Matter Physics School of Physical Sciences National Laboratory of Solid State Microstructures and Department of Physics Interdisciplinary Materials Research Center School of Materials Science and Engineering Dongguan Guangdong 523808 China Nanjing 210093 China Jiangsu Physical Science Research Center Nanjing 210093 China New Cornerstone Laboratory National Synchrotron Radiation Laboratory and School of Nuclear Science and Technology Hefei National Laboratory Hefei 230088 China Shanghai Research Center for Quantum Sciences Shanghai 201315 China

Vortex pinning is a crucial factor that determines the critical current of practical superconductors and enables their diverse applications. However, the underlying mechanism of vortex pinning has long been elusive, lacking a clear microscopic explanation. Here, using high-resolution scanning tunneling microscopy, we studied single vortex pinning induced by point defect in layered FeSe-based superconductors. We found the defect-vortex interaction drives low-energy vortex bound states away from EF, creating a “mini” gap that effectively lowers the system energy and enhances pinning. By measuring the local density of states, we directly obtained the elementary pinning energy and estimated the pinning force via the spatial gradient of pinning energy. The results are consistent with bulk critical current measurement. Furthermore, we showed that a general microscopic quantum model incorporating defect-vortex interaction can naturally capture our observation. It suggests that the local pairing near pinned vortex core is actually enhanced compared to unpinned vortex, which is beyond the traditional understanding that nonsuperconducting regions pin vortices. Our study thus unveils a general microscopic mechanism of vortex pinning in superconductors and provides insights for enhancing the critical current of practical superconductors.

关键词： Vortices in superconductors BCS theory Bogoliubov-de Gennes equations Scanning tunneling microscopy Scanning tunneling spectroscopy Transport techniques

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Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination

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Chip 2024年第3期3卷 36-42页

作者： Bo Li Jinpei Lin Linfei Gao Zhengweng Ma Huakai Yang Zhihao Wu Hsien-Chin Chiu Hao-Chung Kuo Chunfu Zhang Zhihong Liu Shuangwu Huang Wei He Xinke Liu College of Materials Science and Engineering College of Electronics and Information EngineeringInstitute of Microelectronics(IME)Guangdong Research Center for Interfacial Engineering of Functional MaterialsState Key Laboratory of Radio Frequency Heterogeneous IntegrationShenzhen UniversityShenzhen 518060China Department of Electronic Engineering Chang Gung UniversityTaoyuan 333TaiwanChina Department of Photonics and the Institute of Electro-Optical Engineering and with Foxconn Semiconductor Research InstituteNational Chiao Tung UniversityHsinchu 300TaiwanChina Xidian University School of MicroelectronicsXi’an710071China

In this study,a galliumnitride(GaN)substrate and its 15μmepitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy(HVPE)*** enhance the breakdown voltage(VBR)of vertical GaN-on-GaN Schottky barrier diodes(SBDs),a dual ion coimplantation of carbon and heliumwas employed to create the edge *** resulting devices exhibited a low turn-on voltage of 0.55 V,a high Ion/Ioff ratio of approximately 109,and a lowspecific onresistance of 1.93 mU cm^(2).When the ion implantation edge was terminated,the maximumVBR of the devices reached 1575 V,with an average improvement of 126%.These devices demonstrated a high figure of merit(FOM)of 1.28 GW cm^(-2) and showed excellent reliability during pulse stress testing.

关键词： Vertical GaN SBD HVPE Dual ion co-implantation Leakage mechanism Device reliability

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Versatile SrFeO_(x) for memristive neurons and synapses

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Journal of Materiomics 2022年第5期8卷 967-975页

作者： Kaihui Chen Zhen Fan Jingjing Rao Wenjie Li Deming Wang Changjian Li Gaokuo Zhong Ruiqiang Tao Guo Tian Minghui Qin Min Zeng Xubing Lu Guofu Zhou Xingsen Gao Jun-Ming Liu Institute for Advanced Materials South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China Guangdong Provincial Key Laboratory of Optical Information Materials and Technology&National Center for International Research on Green Optoelectronics South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China School of Physics and Telecommunication Engineering South China Normal UniversityGuangzhou510006China Department of Materials Science and Engineering Southern University of Science and TechnologyShenzhen518055China Shenzhen Institute of Advanced Technology Chinese Academy of SciencesShenzhen518055China Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures Nanjing UniversityNanjing210093China

Spiking neural network(SNN)consisting of memristor-based artificial neurons and synapses has emerged as a compact and energy-efficient hardware solution for spatiotemporal information ***,it is challenging to develop memristive neurons and synapses based on the same material system because the required resistive switching(RS)characteristics are ***,it is shown that SrFeO_(x)(SFO),an intriguing material system exhibiting topotactic phase transformation between insulating brownmillerite(BM)SrFeO_(2).5 phase and conductive perovskite(PV)SrFeO_(3) phase,can be engineered into both neuronal and synaptic *** a BM-SFO single layer as the RS medium,the Au/BM-SFO/SrRuO_(3)(SRO)memristor exhibits nonvolatile RS behavior originating from the formation/rupture of PV-SFO filaments in the BM-SFO *** contrast,using a PV-SFO(matrix)/BM-SFO(interfacial layer)bilayer as the RS medium,the Au/PV-SFO/BM-SFO/SRO memristor exhibits volatile RS behavior originating from the interfacial BM-PV phase *** and neuronal characteristics are further demonstrated in the Au/BM-SFO/SRO and Au/PV-SFO/BM-SFO/SRO memristors,*** the SFO-based synapses and neurons,fully memristive SNNs are constructed by simulation,which show good performance on unsupervised image *** study suggests that SFO is a versatile material platform on which both neuronal and synaptic devices can be developed for constructing fully memristive SNNs.

关键词： Memristors Artificial synapses Artificial neurons Spiking neural network SrFeO_(x)

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Observation of the Pinning-Induced Crystal-Hexatic-Glass Transition in Two-Dimensional Colloidal Suspensions

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Chinese Physics Letters 2021年第10期38卷 17-21页

作者： Xiaoyan Sun Huaguang Wang Hao Feng Zexin Zhang Yuqiang Ma Department of Optoelectronics and Energy Engineering City College of SuzhouSuzhou 215104China College of Chemistry Chemical Engineering and Materials ScienceSoochow UniversitySuzhou 215123China Center for Soft Condensed Matter Physics and Interdisciplinary Research Soochow UniversitySuzhou 215006China National Laboratory of Solid State Microstructures and Department of Physics Nanjing UniversityNanjing 210093China

Identification of the glass formation process in various conditions is of importance for fundamental understanding of the mechanism of glass transitions as well as for developments and applications of glassy *** investigate the role of pinning in driving the transformation of crystal into glass in two-dimensional colloidal suspensions of monodisperse *** pinning is produced by immobilizing a fraction of microspheres on the substrate of sample cells where the mobile microspheres ***,the crystal-hexatic-glass transition occurs with increasing the number fraction of pinningρpinning,and the orientational correlation exhibits a change from quasi-long-range to short-range order atρpinning=***,the dynamics shows a nonmonotonic change with increasing the fraction of *** is due to the competition between the disorder that enhances the dynamics and the pinning that hinders the particle *** work highlights the important role of the pinning on the colloidal glass transition,which not only provides a new strategy to prevent crystallization forming glass,but also is helpful for understanding of the vitrification in colloidal systems.

关键词： materials crystal Transition

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Sufficient cathode infiltration for stable 500 Wh kg −1 level lithium–sulfur batteries

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Journal of Energy Chemistry 2025年 109卷 129-137页

作者： Zi-Xian Chen Jia-Jia Zhao Guan-Ya Fang Furong Sun Meng Zhao Xue-Qiang Zhang Bo-Quan Li Jia-Qi Huang School of Materials Science and Engineering Beijing Institute of Technology Beijing 100081 China Advanced Research Institute of Multidisciplinary Science Beijing Institute of Technology Beijing 100081 China Beijing Key Laboratory of Complex Solid State Batteries & Tsinghua Center for Green Chemical Engineering Electrification Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology Department of Chemical Engineering Tsinghua University Beijing 100084 China Shanxi Research Institute for Clean Energy Tsinghua University Taiyuan 030032 Shanxi China

Lithium–sulfur (Li–S) batteries are promising next-generation high-energy-density energy storage devices. However, the failure mechanism of 500 Wh kg −1 level Li–S pouch cells has not been well understood. Herein, quantitative and systematic failure analysis is conducted on 500 Wh kg −1 level Li–S pouch cells to understand the underlying failure mechanism. Focusing on electrolyte exhaustion as the primary cause of cell failure, quantitative analysis methods are established to determine electrolyte occupation by physical infiltration of the cathode, separator, and anode as well as chemical consumption by lithium metal. Insufficient physical infiltration of the cathode caused by irreversible cathode volume expansion is identified as the main cause of electrolyte exhaustion. In comparison, chemical consumption of electrolytes by lithium metal and insufficient anode infiltration have limited influence on cell operations. To address the insufficient cathode infiltration, macropore-rich sulfur cathodes are fabricated to suppress the irreversible volume expansion and prolong the cycling lifespan of Li–S pouch cells by 2.4 times. This work elucidates that the sulfur cathode dominates the cycling lifespan of high-energy-density Li–S batteries and highlights cathode structural design to mitigate irreversible volume expansion for cycling performance improvement.

关键词： Cathode infiltration Failure analysis High energy density Lithium–sulfur battery Pouch cell

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Enhanced thermoelectric properties of the topological phase of monolayer HfC

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Chinese Physics B 2025年第5期34卷 550-558页

作者： Wenlai Mu Nisar Muhammad Baojuan Dong Nguyen Tuan Hung Huaihong Guo Riichiro Saito Weijiang Gong Teng Yang Zhidong Zhang Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesSchool of Materials Science and EngineeringUniversity of Science and Technology of ChinaShenyang 110016China Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics University of Science and Technology of ChinaHefei 230026China Liaoning Academy of Materials Shenyang 110167China State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Opto-ElectronicsShanxi UniversityTaiyuan 030006China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China Frontier Research Institute for Interdisciplinary Sciences Tohoku UniversitySendai 980-8578Japan College of Sciences Liaoning Petrochemical UniversityFushun 113001China Department of Physics Tohoku UniversitySendai 980-8578Japan College of Sciences Northeastern UniversityShenyang 110819China

Thermoelectric properties of a topological insulator,monolayer HfC,are calculated using first-principles calculation,which accounts for the two contributions from edge and bulk *** applying strain up to 8%along the a axis,the monolayer HfC shows the topological phase while it is in a non-topological state without *** figure of merit,ZT,for the topological phase becomes two-ordered magnitude larger(ZT∼2)because of larger electric conductivity than that of the non-topological phase due to edge *** total Seebeck coefficient S,and ZT have maximum values when the chemical potential is located at the highest energy of the edge *** peak of ZT comes from the fact that the product of divergent S and quickly-decreasing electric conductivity above the highest energy of the edge *** further optimize S and ZT by changing the sample size and temperature.

关键词： anomalous Seebeck effect ab initio calculations edge state hafnium carbide thermoelectric Z_(2)topological insulator

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Intrinsically Viscoelastic Supramolecular Conjugated Polymer toward Suppressing Coffee-Ring Effect

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CCS Chemistry 2022年第11期4卷 3529-3539页

作者： Yamin Han Lubing Bai Xiang An Man Xu Chuanxin Wei Zongqiong Lin Mengna Yu Jinyi Lin Lili Sun Ning Sun Changting Wei Linghai Xie Xuehua Ding Qi Wei Chengrong Yin Chenghui Li Wenming Su Wei Huang Key Laboratory of Flexible Electronics(KLOFE) Institute of Advanced Materials(IAM)Nanjing Tech University(NanjingTech)Nanjing 211816 Frontiers Science Center for Flexible Electronics(FSCFE) Shaanxi Institute of Flexible Electronics(SIFE)Shaanxi Institute of Biomedical Materials and Engineering(SIBME)Northwestern Polytechnical University(NPU)Xi’an 710072 State Key Laboratory of Organic Electronics and Information Displays Institute of Advanced Materials(IAM)Nanjing University of Posts&TelecommunicationsNanjing 210023 State Key Laboratory of Coordination Chemistry School of Chemistry and Chemical EngineeringNanjing National Laboratory of MicrostructuresNanjing UniversityNanjing 210093 Printable Electronics Research Center Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhouJiangsu 215123

The rational molecular design of light-emitting conjugated polymers that inherently suppress the ubiquitous coffee-ring effect(CRE)is a great challenge and the critical bottleneck for printing ***,we describe a supramolecular route to construct an intrinsically viscoelastic rigid conjugated polymer(RCP)(PHDPF-Cz)toward avoiding the CRE without sacrificing optoelectronic ***π-πstacking interactions derived fromthe pendant carbazole(Cz)units enable PHDPF-Cz to self-assemble into criss-cross nanofibers and endow its solutionwith great ***,a high-quality and continuous PHDPFCz film was obtained by impeding the transport of aggregates to the droplet edge due to outward capillary flow during evaporation,in sharp contrast to the random aggregate migration and rapid precipitation generated fromthe controlled poly[4-(6-(9H-diphenylaniline-9-yl)hexyloxy)-9,9-diphenylfluorene]-co-[5-(6-(9H-diphenylaniline-9-yl)hexyloxy)-9,9-diphenylfluorene]and poly(9,9-dioctylfluorene)***,an efficient random laser is also achieved based on these cross-linked films with ultrastable single-chain excitonic behavior,confirming the effectiveness of our design strategy.

关键词： coffee-ring effect rigid conjugated polymer supramolecular criss-cross nanofibers optoelectronic properties

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Anomalous Hall and Nernst effect and thermoelectric performance of Sb-doped MnBi6Te10

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Physical Review materials 2025年第1期9卷 015403-015403页

作者： Xinmeng Hu Takayoshi Katase Masaki Kondo Noriaki Hanasaki Hideaki Sakai Jiazhen Wu Department of Materials Science and Engineering Southern University of Science and Technology Shenzhen 518055 China MDX Research Center for Element Strategy International Research Frontiers Initiative Tokyo Institute of Technology 4259 Nagatsuta Midori Yokohama 226–8501 Japan Department of Physics Osaka University Toyonaka Osaka 560-0043 Japan Present address: The Institute of Solid State Physics The University of Tokyo Kashiwa Chiba 277–8581 Japan. Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and Technology Shenzhen 518055 China Institute of Innovative Materials Southern University of Science and Technology Shenzhen 518055 China

Mn(Sb/Bi)2nTe3n+1, a well-known family of intrinsic magnetic topological insulator, possesses nontrivial topological electronic structures, making this family an excellent platform to investigate exotic quantum phenomena. These materials are closely related to the well-known thermoelectric material Bi2Te3. Particularly, with the introduction of intrinsic magnetism, energy conversion based on the magnetothermoelectric effect has also attracted researcher's attentions. Here, we study the magnetic, electrical, and thermoelectric transport properties of a 39% Sb-doped ferromagnetic MnBi6Te10 single crystal. Upon Sb doping, the carrier density is suppressed, the electrical resistivity exhibits a semiconducting behavior, and the power factor PF and the figure of merit ZT are estimated to be 5.07µWcm−1K−2 and 0.14, respectively, at 300 K. At low temperatures, the sample displays the characteristics of two-carriers transport as indicated by the nonlinear Hall effect. The spontaneous anomalous Hall effect and anomalous Nernst effect are observed below the Curie temperature TC∼13K. The Nernst thermopower versus magnetization, |Syx|/M, exceeds the scaling law of conventional magnets, highlighting the enhanced anomalous Nernst effect arising from the intrinsic contribution of the net Berry curvature. Our results provide experimental evidence of nontrivial electronic structures in the ferromagnetic Mn(Sb/Bi)6Te10 and highlight its potential for thermoelectric applications.

关键词： Ferromagnetism

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DPA-2:a large atomic model as a multitask learner

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npj Computational materials 2024年第1期10卷 185-199页

作者： Duo Zhang Xinzijian Liu Xiangyu Zhang Chengqian Zhang Chun Cai Hangrui Bi Yiming Du Xuejian Qin Anyang Peng Jiameng Huang Bowen Li Yifan Shan Jinzhe Zeng Yuzhi Zhang Siyuan Liu Yifan Li Junhan Chang Xinyan Wang Shuo Zhou Jianchuan Liu Xiaoshan Luo Zhenyu Wang Wanrun Jiang Jing Wu Yudi Yang Jiyuan Yang Manyi Yang Fu-Qiang Gong Linshuang Zhang Mengchao Shi Fu-Zhi Dai Darrin M.York Shi Liu Tong Zhu Zhicheng Zhong Jian Lv Jun Cheng Weile Jia Mohan Chen Guolin Ke Weinan E Linfeng Zhang Han Wang AI for Science Institute BeijingP.R.China DP Technology BeijingP.R.China Academy for Advanced Interdisciplinary Studies Peking UniversityBeijingP.R.China State Key Lab of Processors Institute of Computing TechnologyChinese Academy of SciencesBeijingP.R.China University of Chinese Academy of Sciences BeijingP.R.China HEDPS CAPTCollege of EngineeringPeking UniversityBeijingP.R.China Ningbo Institute of Materials Technology and Engineering Chinese Academy of SciencesNingboP.R.China CAS Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Chinese Academy of SciencesNingboP.R.China School of Electronics Engineering and Computer Science Peking UniversityBeijingP.R.China Shanghai Engineering Research Center of Molecular Therapeutics&New Drug Development School of Chemistry and Molecular EngineeringEast China Normal UniversityShanghaiP.R.China Laboratory for Biomolecular Simulation Research Institute for Quantitative Biomedicine and Department of Chemistry and Chemical BiologyRutgers UniversityPiscatawayNJUSA Department of Chemistry Princeton UniversityPrincetonNJUSA College of Chemistry and Molecular Engineering Peking UniversityBeijingP.R.China Yuanpei College Peking UniversityBeijingP.R.China School of Electrical Engineering and Electronic Information Xihua UniversityChengduP.R.China State Key Laboratory of Superhard Materials College of PhysicsJilin UniversityChangchunP.R.China Key Laboratory of Material Simulation Methods&Software of Ministry of Education College of PhysicsJilin UniversityChangchunP.R.China International Center of Future Science Jilin UniversityChangchunP.R.China Key Laboratory for Quantum Materialsof Zhejiang Province Department of PhysicsSchool of ScienceWestlake UniversityHangzhouP.R.China Atomistic Simulations Italian Institute of TechnologyGenovaItaly State Key Laboratory of Physical Chemistry of Solid Surface iChEMCollege of Chemistry and Chemical EngineeringXiame

The rapid advancements in artificial intelligence(AI)are catalyzing transformative changes in atomic modeling,simulation,and ***-driven potential energy models havedemonstrated the capability to conduct large-scale,long-duration simulations with the accuracy of ab initio electronic structure ***,the model generation process remains a bottleneck for large-scale *** propose a shift towards a model-centric ecosystem,wherein a large atomic model(LAM),pretrained across multiple disciplines,can be efficiently fine-tuned and distilled for various downstream tasks,thereby establishing a new framework for molecular *** this study,we introduce the DPA-2 architecture as a prototype for ***-trained on a diverse array of chemical and materials systemsusing a multi-task approach,DPA-2demonstrates superior generalization capabilities across multiple downstream tasks compared to the traditional single-task pre-training and fine-tuning *** approach sets the stage for the development and broad application of LAMs in molecular and materials simulation research.

关键词： DPA establishing thereby

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Long-term and short-term plasticity independently mimicked in highly reliable Ru-doped Ge_(2)Sb_(2)Te_(5) electronic synapses

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InfoMat 2024年第8期6卷 85-96页

作者： Qiang Wang Yachuan Wang Yankun Wang Luyue Jiang Jinyan Zhao Zhitang Song Jinshun Bi Libo Zhao Zhuangde Jiang Jutta Schwarzkopf Shengli Wu Bin Zhang Wei Ren Sannian Song Gang Niu State Key Laboratory for Manufacturing Systems Engineering Electronic Materials Research LaboratoryKey Laboratory of the Ministry of Education&International Center for Dielectric ResearchSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China School of Integrated Circuits Peking UniversityBeijingthe People's Republic of China Beijing Microelectronics Technology Institute Beijingthe People's Republic of China National Key Laboratory of Human-Machine Hybrid Augmented Intelligence National Engineering Research Center for Visual information and Applicationsand School of SoftwareXi'an Jiaotong UniversityXi'anthe People's Republic of China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaithe People's Republic of China Key Laboratory of Microelectronics Device and Integrated Technology The Institute of Microelectronics of Chinese Academy of SciencesBeijingthe People's Republic of China University of Chinese Academy of Sciences Beijingthe People's Republic of China The State Key Laboratory for Manufacturing Systems Engineering&The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China Leibniz-Institut für Kristallzüchtung Max-Born-Straße 2BerlinGermany Key Laboratory of Physical Electronics and Devices Ministry of EducationSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China

In order to fulfill the complex cognitive behaviors in neuromorphic systems with reduced peripheral circuits,the reliable electronic synapses mimicked by single device that achieves diverse long-term and short-term plasticity are *** change random access memory(PCRAM)is of great potential for artificial synapses,which faces,however,difficulty to realize short-term plasticity due to the long-lasting resistance *** work reports the ruthenium-doped Ge_(2)Sb_(2)Te_(5)(RuGST)based PCRAM,demonstrating a series of synaptic behaviors of short-term potentiation,pair-pulse facilitation,longterm depression,and short-term plasticity in the same single *** optimized RuGST electronic synapse with the high transformation temperature of hexagonal phase>380C,the outstanding endurance>108 cycles,the low resistance drift factor of 0.092,as well as the extremely high linearity with correlation coefficients of 0.999 and 0.976 in parts of potentiation and *** investigations also go insight to mechanisms of Ru doping according to thorough microstructure characterization,revealing that Ru dopant is able to enter GST lattices thus changing and stabilizing atomic arrangement of *** leads to the short-term plasticity realized by RuGST ***,the proposed RuGST electronic synapses performs a high accuracy of94.1%in a task of image recognition of CIFAR-100 database using ResNet *** work promotes the development of PCRAM platforms for large-scale neuromorphic systems.

关键词： electronic synapses neuromorphic computing PCRAM Ru-doped Ge_(2)Sb_(2)Te_(5)

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