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Crater formation via homoepitaxy of adatoms dislodged from reducing oxide islands on metal surfaces

Physical Review B 2008年第24期77卷 245427-245427页

作者： Guangwen Zhou Weiying Dai Judith C. Yang Department of Mechanical Engineering & Multidisciplinary Program in Materials Science and Engineering State University of New York Binghamton New York 13902 USA MR Physics Center Department of Radiology Harvard University Massachusetts 02215 USA Department of Mechanical Engineering and Materials Science University of Pittsburgh Pennsylvania 15261 USA

The reduction of Cu2O islands on Cu(100) surfaces under vacuum annealing leads to the formation of surface craters on the substrate surface surrounding the reducing oxide islands. These craters exhibit growth instability characterized by increased slope of both the inner and outer facets of the crater rims. We suggest that the crater formation and the growth instability are related to the homoepitaxial growth of Cu adatoms dislodged from the reducing Cu2O islands. Incorporation of such atomic processes in kinetic Monte Carlo simulations reproduces the morphological features of the experimentally observed craters.

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Epitaxial piezoelectric thin films on flexible substrates

Epitaxial piezoelectric thin films on flexible substrates

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IEEE International Symposium on Applications of Ferroelectrics (ISAF)

作者： C.T. Shelton C. Dandeneau V. Matias B.J. Gibbons Materials Science Program Department of Mechanical Engineering Oregon State University Corvallis OR USA Superconductivity Technology Center Los Alamos National Laboratory Los Alamos NM USA

It is well known that the piezoelectric properties of a thin film can be influenced by crystallographic texture. At the extreme case, epitaxial thin films can be deposited on single crystal substrates (with appropriate lattice matching) to effectively achieve a single crystal thin film. Here, the maximum advantage of orientation dependence is found. Typically this has required small, expensive single crystalline substrates. In the past 10 years however, the technique of Ion Beam Assisted Deposition (IBAD) has been developed for applying a biaxial textured template to an arbitrary smooth surface. That is, biaxially textured MgO (~10 nm thick) can be deposited on a flexible, polycrystalline or amorphous substrate. This has opened up a new realm of materials integration possibilities, with the prime example being high-temperature superconducting wires. Here, the same template is utilized for deposition of epitaxial piezoelectric thin films onto flexible substrates.

关键词： Piezoelectric films Substrates Crystallization Sputtering Crystallography Lattices Ion beams Surface texture Amorphous materials Superconducting materials

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Liquid injection atomic layer deposition of perovskite-type multi-component oxide thin films for ferroelectric and higher-k three dimensional capacitor structures

Liquid injection atomic layer deposition of perovskite-type ...

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IEEE International Symposium on Applications of Ferroelectrics (ISAF)

作者： Susanne Hoffmann-Eifert Takayuki Watanabe Cheol Seong Hwang Rainer Waser Institute of Solid State Research and CNI-Center of Nanoelectronic Systems for Information Technology Research Centre Juelich GmbH Julich Germany Department of Materials Science and Engineering and Inter-university Semiconductor Research Center Seoul National University Seoul South Korea

Quaternary Pb(Zr,Ti)Ox [PZT] films were deposited at 240°C by a combination of liquid injection atomic layer depositions (ALD) of binary PbO, TiOx, and ZrOx thin films. To find the optimum set of precursors different combinations of five precursors were tested: Pb(C11H19O2)2 [Pb(DPM)2], Ti(OC3H7)2(C11H19O2)2 [Ti(Oi-Pr)2(DPM)2] or Ti(OC3H7)4 [Ti(Oi-Pr)4], and Zr(C11H19O2)4 [Zr(DPM)4] or Zr(C9H15O2)4 [Zr(DIBM)4]. Each precursor was dissolved in ethylcyclohexane (ECH) and was separately injected into a vaporizer. Water vapor was used as oxidant. The deposition rates of the metal elements were investigated as a function of the input of the solutions. Using the set of 0.1M Pb(DPM)2, Ti(Oi-Pr)4, and Zr(DIBM)4 solutions resulted in PZT films with good uniformity on 3D structured substrates. The Zr to Ti ratio in the as-deposited PZT films could be adjusted in the range up to Zr/Ti =1. This study suggests that the multi-layer stacking liquid delivery ALD process is an effective method for building up homogeneous layers of multi-component materials on desired 3D structures.

关键词： Atomic layer deposition Sputtering Ferroelectric materials Capacitors Zirconium Semiconductor thin films Amorphous materials Substrates Semiconductor materials Temperature

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The future of photo-induced phase transition (PIPT) – How fast and slow it can be changed?

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Journal of Physics: Conference Series 2009年第1期148卷

作者： A Tomita S Koshihara S Adachi J Itatani K Onda S Ogihara Y Nakano H Yamochi Frontier Research Center and Department of Materials Science Tokyo Institute of Technology 2-12-1 Oh-okayama Meguro-ku Tokyo 152-8551 Japan ERATO 'Non-equilibrium Dynamics Project ' JST To whom any correspondence should be addressed High Energy Accelerator Research Organization 1-1 O-ho Tsukuba Ibaraki 305-0801 Japan Institute for Solid State Physics University of Tokyo 5-1-5 Kashiwanoha Kashiwa Chiba 277-8581 Japan Department of Environmental Chemistry and Engineering Tokyo Institute of Technology 4259 Nagatsuta Midori-ku Yokohama 226-8502 Japan Institute for Integrated Cell-Material Sciences (iCeMS) Kyoto University Sakyo-ku Kyoto 606-8501 Japan Research Center for Low Temperature and Materials Sciences Kyoto University Saikyo-ku Kyoto 606-8502 Japan

The study of photo-controled nature of materials, including their optical, magnetic, and conducting properties, is a fascinating research field. The finding of photo-induced phase transition (PIPT) has triggered the search for inorganic and organic systems with highly efficient and ultrafast photo-responses. As a result of the recent progress in quantum-beam technologies, the time-resolved study of PIPT dynamics on the femto-second time scale, which is comparable with the single-cycle of phonon vibration, has become feasible. In contrast, ultra-slow dynamics on the time scales of a few seconds to several minutes play an important role in the cooperative phenomena in complex systems. Here, we review both the ultra-fast and ultra-slow dynamics of the photo-induced cooperative effects in a typical organic CT crystal (EDO-TTF)2PF6 and a protein molecule, myoglobin (Mb). In the case of Mb, we discuss the results from the viewpoint of a unique photo-functionality, i.e., the photo-induced transportation of a small molecule in the 'super-structure' of a protein molecule.

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Temperature-Dependent Localized Excitations of Doped Carriers in Superconducting Diamond

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Physical Review Letters 2008年第16期100卷 166402-166402页

作者： K. Ishizaka R. Eguchi S. Tsuda A. Chainani T. Yokoya T. Kiss T. Shimojima T. Togashi S. Watanabe C.-T. Chen Y. Takano M. Nagao I. Sakaguchi T. Takenouchi H. Kawarada S. Shin Institute for Solid State Physics University of Tokyo Kashiwa Chiba 277-8581 Japan National Institute for Materials Science Tsukuba Ibaraki 305-0047 Japan The Institute of Physical and Chemical Research (RIKEN) Sayo-gun Hyogo 679-5143 Japan The Graduate School of Natural Science and Technology Okayama University Okayama 700-8530 Japan Beijing Center for Crystal R&D Chinese Academy of Science Zhongguancun Beijing 100080 China School of Science and Engineering Waseda University Shinjuku Tokyo 169-8555 Japan

Laser-excited photoemission spectroscopy is used to show that the doped carriers in metallic or superconducting diamond couple strongly to the lattice via high-energy (∼150 meV) optical phonons, with direct observations of localized Franck-Condon multiphonon sidebands appearing as Fermi-edge replicas. It exhibits a temperature-dependent spectral weight transfer from higher to lower energy sidebands and zero-phonon Fermi-edge states. The quantified coupling strength shows a systematic increase on lowering temperature, implicating its relation to the normal state transport and superconductivity.

关键词： Synthetic diamonds

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Field-induced antiferromagnetism and competition in the metamagnetic state of terbium gallium garnet

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Physical Review B 2008年第6期78卷 064412-064412页

作者： K. Kamazawa Despina Louca R. Morinaga T. J. Sato Q. Huang J. R. D. Copley Y. Qiu Department of Physics University of Virginia Charlottesville Virginia 22904 USA Neutron Science Laboratory Institute for Solid State Physics University of Tokyo 5-1-5 Kashiwanoha Kashiwa Chiba 277-8581 Japan NIST Center for Neutron Research Gaithersburg Maryland 20899 USA Dept. of Materials Science and Engineering University of Maryland College Park Maryland 20742 USA

The magnetic properties of the hyperkagome system of Tb3Ga5O12 have been investigated by neutron scattering. Evidence of antiferromagnetic long-range order of the Tb moments at TN≤0.35 K in zero field is provided. With the application of magnetic field in the paramagnetic phase, ferromagnetic peaks initially appear at nuclear Bragg reflections. With the field higher than 3 Tesla, antiferromagnetic Bragg peaks appear as well indicating that the low-temperature magnetic phase extends well beyond the phase boundary, into the paramagnetic phase, with field. The new magnetic symmetry sets in at the metamagnetic transition in this system.

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Electronic structures and p−d exchange interaction of Mn-doped diluted magnetic semiconductors

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Physical Review B 2008年第20期78卷 205206-205206页

作者： S. Ueda A. Sekiyama T. Iwasaki S. Imada S. Suga Y. Saitoh W. Giriat S. Takeyama NIMS Beamline Station at SPring-8 National Institute for Materials Science Sayo Hyogo 679-5148 Japan Department of Materials Physics Graduate School of Engineering Science Osaka University Toyonaka Osaka 560-8531 Japan Department of Physical Science College of Science and Engineering Ritsumeikan University Kusatsu Shiga 525-8577 Japan Synchrotron Radiation Research Center Japan Atomic Energy Agency Sayo Hyogo 679-5148 Japan Centro de Fisica Instituto Venezolano de Investigaciones Cientificas Caracas 1020A Venezuela The Institute for Solid State Physics The University of Tokyo Kashiwa Chiba 277-8581 Japan

Electronic structures of Mn-doped II-VI diluted magnetic semiconductors (DMSs) were studied by Mn 2p core absorption (XAS), Mn 2p core-level photoelectron (XPS), and Mn 2p−3d resonance photoelectron spectroscopy (RPES). The Mn 2p XAS, 2p XPS, and 2p−3d RPES spectra were analyzed by configuration-interaction theory based on the cluster model. We then obtained a strong negative p−d exchange constant between anion p bands and Mn 3d orbitals for the wide gap DMSs Zn1−xMnxSe and Zn1−xMnxS. In contrast, for the narrow gap DMS Hg1−x−yCdxMnyTe, we found a weak negative p−d exchange constant. By comparing these results with the results of the previous work, we found that the p−d exchange constant in wide and narrow gap II-VI DMSs is proportional to the absolute band-gap energy. This phenomenon can be interpreted by the change in the density of states of anion p bands, which hybridized with the Mn 3d orbitals, at the valence-band maximum. These results suggest that one can control the p−d exchange interaction in DMSs by changing the band-gap energy.

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Superconductivity in Thin Films of Boron-Doped Carbon Nanotubes

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Physical Review Letters 2008年第2期101卷 027002-027002页

作者： N. Murata J. Haruyama J. Reppert A. M. Rao T. Koretsune S. Saito M. Matsudaira Y. Yagi School of Science and Engineering Material Science Course Aoyama Gakuin University 5-10-1 Fuchinobe Sagamihara Kanagawa 229-8558 Japan Institute for Solid State Physics University of Tokyo Kashiwanoha 5-1-5 Kashiwa Chiba 277-8581 Japan JST-CREST 4-1-8 Hon-machi Kawaguchi Saitama 332-0012 Japan Department of Physics and Astronomy Center for Optical Materials Science and Engineering Technologies Clemson University Clemson South Carolina 29634 USA Department of Physics Tokyo Institute of Technology 2-12-1 Oh-okayama Meguro-ku Tokyo 152-8551 Japan

Superconductivity in carbon nanotubes (CNTs) is attracting considerable attention. However, its correlation with carrier doping has not been reported. We report on the Meissner effect found in thin films consisting of assembled boron (B)-doped single-walled CNTs (B-SWNTs). We find that only B-SWNT films consisting of low boron concentration leads to evident Meissner effect with Tc=12 K and also that a highly homogeneous ensemble of the B-SWNTs is crucial. The first-principles electronic-structure study of the B-SWNTs strongly supports these results.

关键词： .CNTs SWNTs Consisting Meissner PRL week ending

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Bulk sensitive spectroscopy for the valence transition in YbInCu4-based compounds

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Physical Review B 2008年第4期78卷 045127-045127页

作者： H. Yamaoka N. Tsujii K. Yamamoto A. M. Vlaicu H. Oohashi H. Yoshikawa T. Tochio Y. Ito A. Chainani S. Shin Harima Institute The Institute of Physical and Chemical Research (RIKEN) Sayo Hyogo 679-5148 Japan Quantum Beam Center National Institute for Materials Science 1-2-1 Sengen Tsukuba 305-0047 Japan Graduate School of Engineering Osaka Prefecture University Sakai Osaka 599-8531 Japan Harima Office National Institute for Materials Science Sayo Hyogo 679-5148 Japan Keihanna Interaction Plaza Incorporated Kyoto 619-0237 Japan Institute for Chemical Research Kyoto University Uji Kyoto 611-0011 Japan Institute of Solid State Physics University of Tokyo Kashiwa Chiba 277-85817 Japan

Bulk sensitive x-ray spectroscopy is performed to systematically study the effect of substitution on the valence transition in strongly correlated Yb compounds, such as Y0.1Yb0.9InCu4, YbInCu4, and YbIn0.88Ag0.12Cu4, and is compared with complementary magnetic-susceptibility results. High-resolution x-ray absorption spectroscopy with partial fluorescence yields mode and resonant x-ray emission spectroscopy is used to measure the valency change as a function of temperature. The valency change determined from spectroscopy exactly follows the temperature evolution of the magnetic susceptibility. The results confirm first-order transitions in Y0.1Yb0.9InCu4 and YbInCu4, while YbIn0.88Ag0.12Cu4 exhibits a continuous mixed-valence transition. The present results are in agreement with the mean-field Anderson lattice model theory of Goltsev and co-workers [Phys. Rev. B 63, 155109 (2001); J. Phys.: Condens. Matter 17, S813 (2005)], which includes the role of local deformations and Kondo volume collapse in the valence transition.

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Intrinsic ferroelectric instability in Pb(In1∕2Nb1∕2)O3 revealed by changing B-site randomness: Inelastic x-ray scattering study

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Physical Review B 2008年第9期77卷 094136-094136页

作者： Kenji Ohwada Kazuma Hirota Hikaru Terauchi Tatsuo Fukuda Satoshi Tsutsui Alfred Q. R. Baron Jun’ichiro Mizuki Hidehiro Ohwa Naohiko Yasuda Quantum Beam Science Directorate (in SPring-8) Japan Atomic Energy Agency 1-1-1 Kouto Sayo-cho Sayo-gun Hyogo 679-5148 Japan CREST Japan Science and Technology Agency (JST) Kawaguchi Saitama 332-0012 Japan Neutron Science Laboratory Institute for Solid State Physics The University of Tokyo 106-1 Shirakata Tokai Ibaraki 319-1106 Japan Advanced Research Center of Science School of Science Kwansei Gakuin University Sanda Hyogo 669-1337 Japan Japan Synchrotron Radiation Research Institute (SPring-8) 1-1-1 Kouto Sayo-cho Sayo-gun Hyogo 679-5198 Japan Materials Dynamics Laboratory RIKEN SPring-8 Center 1-1-1 Kouto Sayo-cho Sayo-gun Hyogo 679-5148 Japan Electrical and Electric Engineering Department School of Engineering Gifu University Gifu 501-1193 Japan

Antiferroelectric (AFE), ferroelectric (FE), or relaxor states can appear in Pb(In1∕2Nb1∕2)O3 (PIN) depending on the perovskite B-site randomness. We studied the effects of this randomness on the dynamics of PIN by high resolution inelastic x-ray scattering using ordered PIN (AFE) and disordered PIN (relaxor) single crystals. We have found a clear softening of a transverse optic mode at the Γ point in both samples, indicating a robust and intrinsic ferroelectric dynamical correlation regardless of the actual ground state. We believe that the correlation results in a FE instability mode, which gives yield to the FE and relaxor states. We interpret that AFE is stabilized only when In and Nb ions are spatially ordered enough to overwhelm the FE instability. As the B-site randomness becomes larger, AFE is suppressed and the hidden FE state starts appearing. Ultimately, the randomness begins to predominate over the development of FE regions and blocks a long range FE order, which we believe yields polar nanoregions resulting in relaxor behaviors.

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