This paper presents a continuous time ultra-high speed broadband $\Sigma-\Delta$ analog-to-digital converter (ADC) with a clock sampling rate of 20 GS/s based on 0.7 $\boldsymbol{\mu}\mathbf{m}\ \mathbf{InP}$ DHBT...
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ISBN:
(纸本)9781665482271
This paper presents a continuous time ultra-high speed broadband $\Sigma-\Delta$ analog-to-digital converter (ADC) with a clock sampling rate of 20 GS/s based on 0.7 $\boldsymbol{\mu}\mathbf{m}\ \mathbf{InP}$ DHBT process. The ADC includes a low-pass second-order $\Sigma-\Delta$ Modulator, which adopts 2bit quantization. The circuit includes a high linearity 2-bit current steering digital to analog converter (DAC). A system level simulation is presented considering values of resistors and capacitors in the integrator, as well as other data regarding the opamp and the quantizer. Simulation results show that for input signal of 1000mV, when the sampling rate is 20GSps, the $\Sigma-\Delta$ ADC designed has a spurious free dynamic range (SFDR) of 45.1dB and a signal-to-noise ratio (SNR) of 35.2dB for input frequency of 620.12 MHz.
The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility...
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The resolution enhancement lithography assisted by chemical shrink(RELACS)is presented to increase the resolution of the i-line *** have succeeded in developing an advanced i-line lithography process based on i-line s...
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ISBN:
(数字)9780738111889
ISBN:
(纸本)9781665419642
The resolution enhancement lithography assisted by chemical shrink(RELACS)is presented to increase the resolution of the i-line *** have succeeded in developing an advanced i-line lithography process based on i-line stepper lithography and second-RELACS ***,the limit resolution of i-line lithography can be increased from 0.35 μm to 0.1 μm at the first time,and the wafer yield of GaN high electron mobility transistor(HEMT)with 3.1 mm gate width which has an Lg = 0.147 μm is 87.4%.Besides,the second-RELACS process is applied to X-band GaN monolithic microwave integrated circuit power amplifier(MMIC PA),the resist width and gate length are about 0.15 μm and 0.2 μ*** is confirmed that the wafer yield of T gate with 6.8 mm gate width can be as high as 70.2%.Comparing with the results of deep ultra-violet(DUV)lithography,the electrical and radio frequency(RF)characteristics of the GaN HEMTs fabricated with the second-RELACS process are stable.
The emerging Au-assisted exfoliation technique provides a wealth of large-area and high-quality ultrathin two-dimensional (2D) materials compared with traditional tape-based exfoliation. Fast, damage-free, and reliabl...
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A low temperature fine pitch wafer scale bonding process through Au-In solid liquid inter diffusion bonding is discussed in this paper. 20 µm fine pitch gold and indium miro-bumps with 10 µm diameter are fab...
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W-band power amplifiers (PAs) play an important role in Gb/s-data-rate wireless communication, imaging, and radar applications. Traditionally, multiple transistors are connected in parallel to maximize the output powe...
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ISBN:
(数字)9781728132051
ISBN:
(纸本)9781728132068
W-band power amplifiers (PAs) play an important role in Gb/s-data-rate wireless communication, imaging, and radar applications. Traditionally, multiple transistors are connected in parallel to maximize the output power. Though the active area, including gate width and number of fingers, can be scaled up to generate large transistors, the metallic inter-connection is not suitable for scaling due to random shape and magnetic coupling. Thus, an accurate device model should be investigated by separating the scalable and the non-scalable parts. In additional, the maximum output power of the PA is known to be limited by intrinsic characteristics of power transistor, such as maximum current density, breakdown voltage, and parasitic element. Compared to silicon-based technology, GaN PAs are able to operate at higher voltages and frequencies, thereby reducing loss and improving power density (W/mm 2 ) [1].
The morphology of the in-situ etching process on Si-face and C-face 4H-SiC, by annealing in a hydrogen environment, is studied by atomic force microscopy (AFM). The uniform step-terrace morphology of both the Si-face ...
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The effects of annealing on epitaxial graphene on SiC substrates with various conditions are investigated. Results show that high pressure hydrogen atmosphere is more effective to decouple the epitaxial graphene from ...
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Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet(UV) lasers are employed to dire...
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Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet(UV) lasers are employed to directly heat and sense the GaN epilayers in the transient thermoreflectance(TTR) measurement, obtaining important thermal transport properties in different GaN heterostructures, which include a diamond thin film heat spreader grown on GaN. The UV TTR technique enables rapid and non-contact thermal characterization for GaN wafers.
In this work, we demonstrate heterogeneous integration of InP DHBT and Si CMOS on the same Silicon substrate based on 30μm Au-In microbump bonding technology, InP DHBTs are vertical stacked at the top of the Si CMOS ...
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In this work, we demonstrate heterogeneous integration of InP DHBT and Si CMOS on the same Silicon substrate based on 30μm Au-In microbump bonding technology, InP DHBTs are vertical stacked at the top of the Si CMOS wafer. Meanwhile, we exhibit a InP-on-Si CMOS 14Gbps 1:16 demultiplexer as example, which shows the potential to integrate InP and Si CMOS on the same chip to take advance of the two different material systems.
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