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检索条件"机构=Science and Technology of Monolithic Integrated and Modules Circuits Laboratory"
211 条 记 录,以下是51-60 订阅
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Influence of the etching process on the surface morphology of 4H-SiC substrate used in the epitaxial graphene
Influence of the etching process on the surface morphology o...
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Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2018
作者: Zhao, Zhifei Li, Yun Wang, Yi Zhou, Ping Yun, Wu Li, Zhonghui Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
The morphology of the in-situ etching process on Si-face and C-face 4H-SiC, by annealing in a hydrogen environment, is studied by atomic force microscopy (AFM). The uniform step-terrace morphology of both the Si-face ... 详细信息
来源: 评论
Effects of annealing parameters on epitaxial graphene on SiC substrates
Effects of annealing parameters on epitaxial graphene on SiC...
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Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2018
作者: Wang, Yi Li, Yun Zhao, Zhifei Zhou, Ping Yin, Zhijun Li, Zhonghui Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
The effects of annealing on epitaxial graphene on SiC substrates with various conditions are investigated. Results show that high pressure hydrogen atmosphere is more effective to decouple the epitaxial graphene from ... 详细信息
来源: 评论
Reliable and Broad-range Layer Identification of Au-assisted Exfoliated Large Area MoS2 and WS2 Using Reflection Spectroscopic Fingerprints
arXiv
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arXiv 2022年
作者: Zou, Bo Zhou, Yu Zhou, Yan Wu, Yanyan He, Yang Wang, Xiaonan Yang, Jinfeng Zhang, Lianghui Chen, Yuxiang Zhou, Shi Guo, Huaixin Sun, Huarui School of Science Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of Technology Shenzhen518055 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China University of Science and Technology of China Hefei230026 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
The emerging Au-assisted exfoliation technique provides a wealth of large-area and high-quality ultrathin two-dimensional (2D) materials compared with traditional tape-based exfoliation. Fast, damage-free, and reliabl... 详细信息
来源: 评论
Heterogenous Integration of InP DHBT and Si CMOS by $30\mu\mathrm{m}$ Pitch Au-In Microbumps
Heterogenous Integration of InP DHBT and Si CMOS by $30\mu\m...
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IEEE Electron Devices technology and Manufacturing Conference (EDTM)
作者: LiShu Wu JiaYun Dai Cheng Wei YueChan Kong TangShen Chen Tong Zhang Joint International Research Laboratory of Information Display and Visualization School of Electronic Science and Engineering Southeast University Nanjing P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China
In this work, we demonstrate heterogeneous integration of InP DHBT and Si CMOS on the same Silicon substrate based on 30μm Au-In microbump bonding technology, InP DHBTs are vertical stacked at the top of the Si CMOS ... 详细信息
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11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF $C_{\mathrm{j}0}$
11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF ...
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UK, Europe, China Millimeter Waves and THz technology Workshop (UCMMT)
作者: Bin Niu Daoyu Fan Gang Lin Kunpeng Dai Hai-Yan Lu Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute and Nanjing Chip Valley Industrial Technology Institute Nanjing China
GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-anode GaAs ter... 详细信息
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Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance
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Chinese Physics B 2019年 第6期28卷 105-109页
作者: Kang Liu Jiwen Zhao Huarui Sun Huaixin Guo Bing Dai Jiaqi Zhu 1Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Center for Composite Materials and Structures Harbin Institute of TechnologyHarbin 150080China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China
Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet(UV) lasers are employed to dire... 详细信息
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Design of Broadband Amplifier Based on InP DHBT
Design of Broadband Amplifier Based on InP DHBT
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IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
作者: Hou Yanfei Yu Weihua Sun Yan Cheng Wei Laboratory of Millimeter-wave and Terahertz Technology Beijing Institute of Technology Beijing China Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
This paper presents a design of broadband high-flatness amplifier based on 0.5-μm InP double heterojunction bipolar transistor (DHBT) technology. The proposed amplifier contains five stages. To achieve the purpose of... 详细信息
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Characterize and optimize the four-wave mixing in dual-interferometer coupled silicon microrings
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Chinese Physics B 2019年 第10期28卷 198-203页
作者: Chao Wu Yingwen Liu Xiaowen Gu Shichuan Xue Xinxin Yu Yuechan Kong Xiaogang Qiang Junjie Wu Zhihong Zhu Ping Xu Institute for Quantum Information and State Key Laboratory of High Performance Computing College of ComputerCollege of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha 410073China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China National Laboratory of Solid State Microstructures and School of Physics Nanjing UniversityNanjing 210093China
By designing and fabricating a series of dual-interferometer coupled silicon microrings, the coupling condition of the pump, signal, and idler beams can be engineered independently and then we carried out both the con... 详细信息
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Analysis on the Effect of Laval Microchannel Structure in Si Interposer for GaN HEMTs Cooling
Analysis on the Effect of Laval Microchannel Structure in Si...
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International Conference on (ICEPT) Electronic Packaging technology
作者: Miao Yu Jian Zhu Min Huang Hongze Zhang School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing University Nanjing China School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing University Nanjing China Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China
The microfluid cooling is widely used in the thermal management for high power integration in 3D Si RF microsystem. The simple and efficient microfluid structure is essential in large area cooling for the module with ... 详细信息
来源: 评论
Numerical Study on Microjet Cooling Structure for GaN HEMTs Integration on Silicon
Numerical Study on Microjet Cooling Structure for GaN HEMTs ...
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International Conference on (ICEPT) Electronic Packaging technology
作者: Miao Yu Jian Zhu Min Huang Hongze Zhang School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing University Nanjing China School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing University Nanjing China Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China
An analysis on the heat transfer feature of the microfluid cooling based on the microjet structure in the Si interposer for GaN HEMTs was investigated to meet the requirement of thermal management in RF microsystem in... 详细信息
来源: 评论