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Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2018

作者： Zhao, Zhifei Li, Yun Wang, Yi Zhou, Ping Yun, Wu Li, Zhonghui Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9783035713855

The morphology of the in-situ etching process on Si-face and C-face 4H-SiC, by annealing in a hydrogen environment, is studied by atomic force microscopy (AFM). The uniform step-terrace morphology of both the Si-face and C-face 4H-SiC is achieved with the assistance of carbon/silicon flux. The full width at half maximum (FWHM) of Raman 2D peak for the graphene grown on the uniform step-terrace morphology of the Si-face and C-face is 36.2 cm-1 and 22 cm-1, respectively. © 2019 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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Effects of annealing parameters on epitaxial graphene on SiC substrates

Effects of annealing parameters on epitaxial graphene on SiC...

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Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2018

作者： Wang, Yi Li, Yun Zhao, Zhifei Zhou, Ping Yin, Zhijun Li, Zhonghui Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9783035713855

The effects of annealing on epitaxial graphene on SiC substrates with various conditions are investigated. Results show that high pressure hydrogen atmosphere is more effective to decouple the epitaxial graphene from SiC substrate than that of a relative lower pressure process. Besides, the characteristic 2D-peak of graphene in Raman spectra disappeared with an annealing temperature 1000 °C, which means that the epitaxial graphene layer was decomposed in this condition. The study also shows that the decomposition of graphene can be effectively suppressed by increasing carbon vapor partial pressure through introducing ethylene during high pressure hydrogen annealing at 1000 °C. And the epitaxial graphene is successfully transferred to quasi free standing graphene by the annealing with an appropriate flow of ethylene. © 2019 Trans Tech Publications Ltd, Switzerland.

关键词： Ethylene

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Reliable and Broad-range Layer Identification of Au-assisted Exfoliated Large Area MoS2 and WS2 Using Reflection Spectroscopic Fingerprints

arXiv

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arXiv 2022年

作者： Zou, Bo Zhou, Yu Zhou, Yan Wu, Yanyan He, Yang Wang, Xiaonan Yang, Jinfeng Zhang, Lianghui Chen, Yuxiang Zhou, Shi Guo, Huaixin Sun, Huarui School of Science Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of Technology Shenzhen518055 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China University of Science and Technology of China Hefei230026 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

The emerging Au-assisted exfoliation technique provides a wealth of large-area and high-quality ultrathin two-dimensional (2D) materials compared with traditional tape-based exfoliation. Fast, damage-free, and reliable determination of the layer number of such 2D films is essential to study layer-dependent physics and promote device applications. Here, an optical method has been developed for simple, high throughput, and accurate determination of the layer number for Au-assisted exfoliated MoS2 and WS2 films in a broad thickness range. The method is based on quantitative analysis of layer-dependent white light reflection spectra, revealing that the reflection peak intensity can be used as a clear indicator for determining the layer number. The simple yet robust method will facilitate the fundamental study on layer-dependent optical, electrical, and thermal properties and device applications of 2D materials. The technique can also be readily combined with photoluminescence and Raman spectroscopies to study other layer-dependent physical properties of 2D materials. Copyright © 2022, The Authors. All rights reserved.

关键词： Layered semiconductors

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Heterogenous Integration of InP DHBT and Si CMOS by $30\mu\mathrm{m}$ Pitch Au-In Microbumps

Heterogenous Integration of InP DHBT and Si CMOS by $30\mu\m...

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IEEE Electron Devices technology and Manufacturing Conference (EDTM)

作者： LiShu Wu JiaYun Dai Cheng Wei YueChan Kong TangShen Chen Tong Zhang Joint International Research Laboratory of Information Display and Visualization School of Electronic Science and Engineering Southeast University Nanjing P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China

In this work, we demonstrate heterogeneous integration of InP DHBT and Si CMOS on the same Silicon substrate based on 30μm Au-In microbump bonding technology, InP DHBTs are vertical stacked at the top of the Si CMOS wafer. Meanwhile, we exhibit a InP-on-Si CMOS 14Gbps 1:16 demultiplexer as example, which shows the potential to integrate InP and Si CMOS on the same chip to take advance of the two different material systems.

关键词： DH-HEMTs CMOS technology Silicon Manufacturing III-V semiconductor materials Bonding Indium phosphide

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11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF $C_{\mathrm{j}0}$

11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF ...

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UK, Europe, China Millimeter Waves and THz technology Workshop (UCMMT)

作者： Bin Niu Daoyu Fan Gang Lin Kunpeng Dai Hai-Yan Lu Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute and Nanjing Chip Valley Industrial Technology Institute Nanjing China

ISBN: (数字)9781728190648

ISBN: (纸本)9781728190655

GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-anode GaAs terahertz SBD was presented with its C j0 scaled into sub-fF range. Scalling C-V measurement showed C j0 without parasitic capacity reached 0.476fF for the 0.5μm anode diameter device. With the relative low series resistance R s of 28.8Ω, cutoff frequency f t reached 11.6THz. The whole process was based on 4 inch GaAs wafer, guarantee stability and conformity in terahertz GaAs SBD integrated circuits working over 1THz.

关键词： Anodes Gallium arsenide Schottky diodes Metals Shape Resistance Probes

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Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance

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Chinese Physics B 2019年第6期28卷 105-109页

作者： Kang Liu Jiwen Zhao Huarui Sun Huaixin Guo Bing Dai Jiaqi Zhu 1Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Center for Composite Materials and Structures Harbin Institute of TechnologyHarbin 150080China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China

Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet(UV) lasers are employed to directly heat and sense the GaN epilayers in the transient thermoreflectance(TTR) measurement, obtaining important thermal transport properties in different GaN heterostructures, which include a diamond thin film heat spreader grown on GaN. The UV TTR technique enables rapid and non-contact thermal characterization for GaN wafers.

关键词： GaN heteroepitaxy thermal conductivity transient thermoreflectance ultraviolet laser

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Design of Broadband Amplifier Based on InP DHBT

Design of Broadband Amplifier Based on InP DHBT

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IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

作者： Hou Yanfei Yu Weihua Sun Yan Cheng Wei Laboratory of Millimeter-wave and Terahertz Technology Beijing Institute of Technology Beijing China Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (数字)9781728160641

ISBN: (纸本)9781728160658

This paper presents a design of broadband high-flatness amplifier based on 0.5-μm InP double heterojunction bipolar transistor (DHBT) technology. The proposed amplifier contains five stages. To achieve the purpose of increasing gain flatness and bandwidth, the matching networks were combined with the bias circuits. The simulation results demonstrate a peak gain of 19.5 dB at 140 GHz and the gain is greater than 17 dB over the broad frequency range of 55 to 170 GHz. The saturation output power achieves 3.31 dBm at 140 GHz with DC power consumption 72 mW. The proposed amplifier has a compact chip size of only 1.4x0.9 mm 2 including testing input/output pads.

关键词： Indium phosphide III-V semiconductor materials Gain DH-HEMTs Distributed amplifiers Broadband amplifiers

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Characterize and optimize the four-wave mixing in dual-interferometer coupled silicon microrings

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Chinese Physics B 2019年第10期28卷 198-203页

作者： Chao Wu Yingwen Liu Xiaowen Gu Shichuan Xue Xinxin Yu Yuechan Kong Xiaogang Qiang Junjie Wu Zhihong Zhu Ping Xu Institute for Quantum Information and State Key Laboratory of High Performance Computing College of ComputerCollege of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha 410073China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China National Laboratory of Solid State Microstructures and School of Physics Nanjing UniversityNanjing 210093China

By designing and fabricating a series of dual-interferometer coupled silicon microrings, the coupling condition of the pump, signal, and idler beams can be engineered independently and then we carried out both the continuous-wave and pulse pumped four-wave mixing experiments to verify the dependence of conversion efficiency on the coupling conditions of the four interacting beams, respectively. Under the continuous-wave pump, the four-wave mixing efficiency gets maximized when both the pump and signal/idler beams are closely operated at the critical coupling point, while for the pulse pump case, the efficiency can be enhanced greatly when the pump and converted idler beams are all overcoupled. These experiment results agree well with our theoretical calculations. Our design provides a platform for explicitly characterizing the four-wave mixing under different pumping conditions, and offers a method to optimize the four-wave mixing, which will facilitate the development of on-chip all-optical signal processing with a higher efficiency or reduced pump power.

关键词： silicon resonators four-wave mixing Mach-Zehnder interferometer

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Analysis on the Effect of Laval Microchannel Structure in Si Interposer for GaN HEMTs Cooling

Analysis on the Effect of Laval Microchannel Structure in Si...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Miao Yu Jian Zhu Min Huang Hongze Zhang School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing University Nanjing China School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing University Nanjing China Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168272

The microfluid cooling is widely used in the thermal management for high power integration in 3D Si RF microsystem. The simple and efficient microfluid structure is essential in large area cooling for the module with multiple active devices integrated on silicon. A novel Laval microchannel structure was proposed in this paper, and it was simple to design and easy for process. The thermal and hydraulic characteristics of Laval microchannel were investigated and compared with the conventional straight microchannel and 2 kinds of common serpentine microchannels using FEM analysis. The results indicated that Laval microchannel had low flow resistance to maintain high pumping power and achieved the best cooling performance among different microchannel structures. And Laval structure can be effective to keep junction temperature below 150 °C which can provide the sufficient condition for GaN HEMTs device operating with high efficiency and good linearity. It presented remarkable cooling performance for GaN HEMTs cooling integrated on Si, showing excellent candidate structure for large area cooling in 3D Si RF microsystem.

关键词： Microchannels Gallium nitride Silicon HEMTs MODFETs Cooling Junctions

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Numerical Study on Microjet Cooling Structure for GaN HEMTs Integration on Silicon

Numerical Study on Microjet Cooling Structure for GaN HEMTs ...

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International Conference on (ICEPT) Electronic Packaging technology

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168272

An analysis on the heat transfer feature of the microfluid cooling based on the microjet structure in the Si interposer for GaN HEMTs was investigated to meet the requirement of thermal management in RF microsystem integration. The microjet cooling structure in the Si interposer consists of 2 layers of microfluids forming the microjets in the bottom layer and separating in the top layer from 2 directions. The GaN HEMTs device is bonded on the Si interposer with the transistor gates above the microjets to utilize the high local heat transfer coefficient effectively. The distributions of temperature and the maximum pressure variations in the cooling structure with different size parameters at different flow rates were investigated using FEM analysis, and the optimum relations of dominant parameters were proposed to achieve excellent cooling performance in this paper. Therefore, a simplified function can be established to evaluate the heat transfer coefficient with the optimized size parameters. The model of a 48 W/mm 2 power density GaN HEMTs device integrated on the Si interposer with optimized microjet cooling structure was simulated. The result indicated that the thermal resistance of the integrated system is 0.96 K/W which is equal to the thermal resistance of the device bonded on a 3 mm thick copper plate directly. The study on the property of the microfluid cooling in Si interposer provided a useful support for RF microsystem heterogeneous integration for GaN high power device on silicon.

关键词： Cooling Gallium nitride HEMTs MODFETs Heat transfer Microchannels Silicon

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