We present a scheme for the electromagnetically-induced-absorption(EIA)-like ground state cooling in a hybrid optomechanical system which is combined by two-level quantum systems(qubits)and a high-Q optomechanical ***...
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We present a scheme for the electromagnetically-induced-absorption(EIA)-like ground state cooling in a hybrid optomechanical system which is combined by two-level quantum systems(qubits)and a high-Q optomechanical *** the weak qubit-cavity coupling,the system exhibits an EIA-like effect and this effect is caused by quantum destructive interference that is distinct from the conventional EIA effect driven by quantum constructive *** importantly,the EIA-like cooling mechanism can significantly enhance the cooling rate of the hybrid system,enabling the final phonon number beyond the classical cooling limit in the strong optomechanical coupling ***,the cooling effects of the EIA case is better than that of the normalmode splitting case under the same optomechanical coupling strength and qubit dissipation rate.
Radiation effects of silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFETs)induced by 20 MeV proton under drain bias(V_(D)=800 V,V_(G)=0 V),gate bias(V_(D)=0 V,V_(G)=10 V),turn-on bias(V_(D)...
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Radiation effects of silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFETs)induced by 20 MeV proton under drain bias(V_(D)=800 V,V_(G)=0 V),gate bias(V_(D)=0 V,V_(G)=10 V),turn-on bias(V_(D)=0.5 V,V_(G)=4 V)and static bias(V_(D)=0 V,V_(G)=0 V)are *** drain current of SiC MOSFET under turn-on bias increases linearly with the increase of proton fluence during the proton *** the cumulative proton fluence reaches 2×10^(11)p·cm^(-2),the threshold voltage of SiC MOSFETs with four bias conditions shifts to the left,and the degradation of electrical characteristics of SiC MOSFETs with gate bias is the most *** the deep level transient spectrum test,it is found that the defect energy level of SiC MOSFET is mainly the ON2(E_(c)-1.1 eV)defect center,and the defect concentration and defect capture cross section of SiC MOSFET with proton radiation under gate bias increase *** comparing the degradation of SiC MOSFET under proton cumulative irradiation,equivalent 1 MeV neutron irradiation and gamma irradiation,and combining with the defect change of SiC MOSFET under gamma irradiation and the non-ionizing energy loss induced by equivalent 1 MeV neutron in SiC MOSFET,the degradation of SiC MOSFET induced by proton is mainly caused by ionizing radiation *** results of TCAD analysis show that the ionizing radiation damage of SiC MOSFET is affected by the intensity and direction of the electric field in the oxide layer and epitaxial layer.
Experiments and simulation studies on 283 MeV I ion induced single event effects of silicon carbide(SiC) metal–oxide–semiconductor field-effect transistors(MOSFETs) were carried out. When the cumulative irradiation ...
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Experiments and simulation studies on 283 MeV I ion induced single event effects of silicon carbide(SiC) metal–oxide–semiconductor field-effect transistors(MOSFETs) were carried out. When the cumulative irradiation fluence of the SiC MOSFET reached 5×10^(6)ion·cm^(-2), the drain–gate channel current increased under 200 V drain voltage, the drain–gate channel current and the drain–source channel current increased under 350 V drain voltage. The device occurred single event burnout under 800 V drain voltage, resulting in a complete loss of breakdown voltage. Combined with emission microscope, scanning electron microscope and focused ion beam analysis, the device with increased drain–gate channel current and drain–source channel current was found to have drain–gate channel current leakage point and local source metal melt, and the device with single event burnout was found to have local melting of its gate, source, epitaxial layer and substrate. Combining with Monte Carlo simulation and TCAD electrothermal simulation, it was found that the initial area of single event burnout might occur at the source–gate corner or the substrate–epitaxial interface, electric field and current density both affected the lattice temperature peak. The excessive lattice temperature during the irradiation process appeared at the local source contact, which led to the drain–source channel damage. And the excessive electric field appeared in the gate oxide layer, resulting in drain–gate channel damage.
This article investigates the influence of temperature on the total ionizing dose (TID) effects in optical fibers. Radiation induced attenuation (RIA) spectra at 1310 nm were measured in G652, OM, PM1016-C, and homema...
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Achieving high-performance fully-vertical GaN devices on low-cost and large-scale foreign substrates are highly attractive for the development of device technology. In this work, by performing pulsed laser lift-off an...
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Flexible solid-state cooling devices with high efficiency are attracted to ferroelectric polymers with excellent negative electrocaloric(EC)*** is challenging to obtain a large negative EC effect in ferroelectric poly...
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Flexible solid-state cooling devices with high efficiency are attracted to ferroelectric polymers with excellent negative electrocaloric(EC)*** is challenging to obtain a large negative EC effect in ferroelectric polymers due to the lack of tunable techniques.A giant negative EC response was obtained in the poly(vinylidene fluoride-trifluoroethylene)copolymers(P(VDF-TrFE),70/30,in mole ratio)irra-diated with high-energy *** irradiated P(VDF-TrFE)films showed an adiabatic temperature change of-13.5 K at 40 MV/m under a dose of 5 Mrad(1 Mrad=10^(4) J/kg)obtained by the indirect *** significant negative EC effect is attributed to the enhancement of crystalline due to the entry of polymer molecules into the amorphous to crystalline structure and the reduction of heat ca-pacity due to the increase of *** addition,X-ray irradiation improves the dielectric coefficient from 15 to *** research indicates that irradiation can modify the negative EC properties of ferro-electric polymers for solid-state cooling.
In order to study the reliability of bonding wire under the condition of humidity environment, a testing structure chip was designed and three samples were subjected to humid test at 85℃/85% RH. During the experiment...
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Image segmentation remains a challenging problem in computer vision. Various segmentation methods have been developed, including traditional methods based on threshold, edge, region, and morphology, as well as novel m...
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The surface identification of integrated circuit (IC) has not been standardized yet, and the task of detecting IC logos is often carried out manually, which is prone to high subjectivity and low efficiency. Traditiona...
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In this paper, a high-power microwave resonant cavity is designed and used to build a high-power microwave radiation experimental system, and the high-power microwave radiation interference effect of GaN low-noise amp...
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