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arXiv 2024年

作者： Zhang, Xiuying Xu, Linqiang Lu, Jing Zhang, Zhaofu Shen, Lei Department of Mechanical Engineering National University of Singapore 9 Engineering Drive 1 Singapore117575 Singapore Hubei Key Laboratory of Electronic Manufacturing and Packaging Integration Wuhan University Wuhan430072 China State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing100871 China The Institute of Technological Sciences Wuhan University Wuhan430072 China

Quantum-mechanics-based transport simulation is of well-known importance for the design of quantum-scale ultra-short channel field-effect transistors (FETs) with its capability of understanding the physical mechanism, while facing the primary challenge of the high computational intensity. Traditional machine learning is expected to accelerate the optimization of FET design, yet its application in this field is limited by the lack of both high-fidelity datasets and the integration of physical knowledge. Here, we introduced a physics-integrated neural network framework to accurately predict the transport Ids-Vgs curves of sub-5-nm gate-all-around (GAA) FETs using an in-house developed high-fidelity database. The transport curves in the database are collected from literature and our first-principles calculations. Beyond silicon, we include indium arsenide, indium phosphide, and selenium nanowires with different structural phases as the FET channel materials in our database. Based on the database, we built a physical-knowledge-integrated hyper vector neural network (PHVNN), in which five new physical features were added into the inputs for prediction transport characteristics of the devices, achieving a sufficiently low mean absolute error of 0.39. In particular, ~98% of the current prediction residuals are within one order of magnitude. Using PHVNN, we efficiently screened out the symmetric p-type GAA FETs that possess the same figures of merit with the n-type ones, which are crucial for the fabrication of homogeneous complementary metal-oxide-semiconductor (CMOS) circuits. Finally, our automatic differentiation analysis provides interpretable insights into the PHVNN, which highlights the important contributions of our new input parameters and improves the reliability of PHVNN. Our approach provides an effective method for rapidly screening appropriate GAA FETs with the prospect of accelerating the design process of next-generation electronic devices. © 2024, CC BY.

关键词： Indium phosphide

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Modulation of Ferromagnetism Through Electron Doping in Pd-Doped Β-Ga2o3

SSRN

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SSRN 2024年

作者： Yue, Yunliang Wang, Min Xie, Weifeng Lu, Jing College of Information Engineering Yangzhou University Yangzhou225127 China Hebei Key Laboratory of Photoelectric Control on Surface and Interface School of Information Science and Engineering Hebei University of Science and Technology Shijiazhuang050018 China State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing100871 China School of Physics Central South University Changsha410083 China

The introduction of magnetism to semiconductor materials holds the potential to expand their applications in spintronics. In this study, first-principles calculations are employed to explore the magnetic properties resulting from the substitution of Pd atoms for Ga atoms in β-Ga2O3. Initial findings reveal that Pd doping in tetrahedral coordination incurs significantly high energy costs, favoring substitution at octahedral Ga sites. Under n-type doping conditions, Pd tends to adopt a negatively charged state. Further investigation focuses on the magnetic interaction of Pd-Pd pairs, showcasing the tunability of ferromagnetism in the material through external modulation of carrier concentration. At specific n-type carrier densities, a distinct ferromagnetic interaction is observed, diminishing with further increases in carrier concentration. This research provides concise insights into the defect energetics, charge states, and magnetic behavior of Pd-doped β-Ga2O3, highlighting the potential for controlling magnetic properties through carrier concentration modulation. © 2024, The Authors. All rights reserved.

关键词： Carrier concentration

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Vortex soliton microcombs

Vortex soliton microcombs

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2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Liu, Yanwu Lao, Chenghao Wang, Min Cheng, Yinke Fu, Shiyao Gao, Chunqing Wang, Jianwei Xiao, Yun-Feng Li, Bei-Bei Gong, Qihuang Liu, Wenjing Yang, Qi-Fan State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics School of Physics Peking University Beijing100871 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing100190 China University of Chinese Academy of Sciences Beijing100049 China School of Optics and Photonics Beijing Institute of Technology Beijing100081 China Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan030006 China Peking University Yangtze Delta Institute of Optoelectronics Jiangsu Nantong226010 China Songshan Lake Materials Laboratory Guangdong Dongguan523808 China

We correlate the dimensions of frequency and orbital angular momentum (OAM) by forming soliton microcombs in an integrated microresonator vortex emitter. One-to-one correspondence between the OAM and frequency is conf... 详细信息

ISBN: (纸本)9781957171258

关键词： Microresonators

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Frequency-Resolved Forward Capacitance in GaN-based LEDs

arXiv

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arXiv 2024年

作者： Li, Yuchen Chen, Zhizhong Deng, Chuhan Dong, Boyan Wang, Daqi Pan, Zuojian Zhang, Haodong Nie, Jingxin Chen, Weihua Jiao, Fei Kang, Xiangning Wang, Qi Zhang, Guoyi Shen, Bo Liang, Wenji State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing100871 China Dongguan Institute of Optoelectronics Peking University Guangdong Dongguan523808 China Yangtze Delta Institute of Optoelectronics Peking University Jiangsu Nantong226000 China State Key Laboratory of Nuclear Physics and Technology School of Physics Peking University Beijing100871 China AET Displays Limited Co. Ltd Guangdong Dongguan China

To meet the demand for high-speed response in display and VLC applications, a more detailed study of the capacitive effects in LEDs is required. This work tested the capacitance of LEDs at different frequencies and proposed an effective circuit model, which achieved a good fit to the frequency dispersion observed in the experimental results. Additionally, it was determined that the low-frequency 1/f capacitance originates from the metal-semiconductor interface. Copyright © 2024, The Authors. All rights reserved.

关键词： III-V semiconductors

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Critical behavior and large magnetocaloric properties in a van der Waals ferromagnet CrBr3

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Physical Review Applied 2025年第2期23卷 024027-024027页

作者： Zhongchong Lin Liqiang Zeng Shaohua Fan Luozhao Zhang Yue Chen Jinbo Yang Zhigao Huang College of Physics and Energy Fujian Normal University Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials Fuzhou 350117 P. R. China State Key Laboratory for Artificial Microstructure & Mesoscopic Physics School of Physics Peking University Beijing 100871 P. R. China Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers Fudan University Shanghai 200438 P. R. China Beijing Key Laboratory for Magnetoelectric Materials and Devices Beijing 100871 P. R. China Fujian Provincial Engineering Technical Research Centre of Solar-Energy Conversion and Stored Energy Fuzhou 350117 P. R. China

CrBr3 is a promising van der Waals (vdW) material for future spintronic applications due to its unique layer stacking and multiple magnetic phases. In particular, the ability to manipulate magnetothermal properties through its structural modification makes it suitable for cooling applications in nanodevices. In this work, using the complementary modified Arrott plot, the Kouvel-Fisher method, the Widom scaling law, and critical isotherm analysis, a comprehensive analysis of critical behavior around the Curie temperature TC is performed, and the reliable critical exponents [β = 0.245(3), γ = 1.010(6), and δ = 5.207(2)] are obtained. The critical exponents of CrBr3 satisfy the universality class of the tricritical mean-field theory, indicating that the magnetic phase transition of CrBr3 is a second-order phase transition and close to a three- to two-dimensional tricritical point near TC. Below TC, we observe a clear first-order phase transition and construct the magnetic phase diagram of CrBr3 crystals. A large and anisotropic magnetocaloric effect in CrBr3 crystals is further confirmed. The maximum magnetic entropy change (−ΔSMmax) at TC for the out-of-plane and in-plane directions are 6.72 and 6.55 J kg−1 K−1, respectively. Additionally, the relative cooling powers in these directions are 137.51 and 133.46 J kg−1 at 5 T, underscoring the magnetic cooling application of CrBr3. Our findings on CrBr3 not only provide an in-depth understanding of the magnetic phase transition, but also indicate potential applications in magnetic refrigeration.

关键词： Van der Waals forces

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An efficient route to prepare suspended monolayer for feasible optical and electronic characterizations of two-dimensional materials

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InfoMat 2022年第2期4卷 126-138页

作者： Yuan Huang Yun-Kun Wang Xin-Yu Huang Guan-Hua Zhang Xu Han Yang Yang Yunan Gao Lei Meng Yushu Wang Guang-Zhou Geng Li-Wei Liu Lin Zhao Zhi-Hai Cheng Xin-Feng Liu Ze-Feng Ren Hui-Xia Yang Yufeng Hao Hong-Jun Gao Xing-Jiang Zhou Wei Ji Ye-Liang Wang Advanced Research Institute of Multidisciplinary Science Beijing Institute of TechnologyBeijingChina Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijingChina Songshan Lake Materials Laboratory DongguanChina State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of PhysicsPeking UniversityBeijingChina Frontiers Science Center for Nanooptoelectronics&Collaborative Innovation Center of Quantum Matter BeijingChina State Key Laboratory of Molecular Reaction Dynamics Dalian Institute of Chemical PhysicsChinese Academy of SciencesDalianChina Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuanChina Minzu University of China BeijingChina National Laboratory of Solid State Microstructures College of Engineering and Applied SciencesJiangsu Key Laboratory of Artificial Functional MaterialsCollaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjingChina School of Information and Electronics MIIT Key Laboratory for Low-Dimensional Quantum Structure and DevicesBeijing Institute of TechnologyBeijingChina Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials&Micro-Nano Devices Renmin University of ChinaBeijingChina National Center for Nanoscience and Technology(NCNST)of China BeijingChina Haian Institute of New Technology Nanjing UniversityHaianChina University of Chinese Academy of Sciences BeijingChina

Two-dimensional(2D)materials are highly sensitive to substrates,interfaces,and the surrounding *** 2D materials are free from substrate-induced effects,thus an ideal approach to study their intrinsic ***,it is very challenging to prepare large-area suspended 2D materials with high *** we report a universal method,based on pretreatments of densely patterned hole array substrates with either oxygenplasma or gold film deposition,to prepare large-area suspended mono-and few-layer 2D *** structural,optical,and electrical characterization tools were used to fully evaluate the improved performance of various suspended 2D *** of these observations reported in this study are:(1)Observation of a new Raman low frequency mode for the suspended MoS_(2);(2)Significantly stronger photoluminescence(PL)and second harmonic generation(SHG)signals of suspended WSe_(2),which enables the study of new optical transition processes;(3)The low energy electron diffraction pattern on suspended MoS_(2) also exhibits much sharper spots than that on the supported area;and(4)The mobility of suspended graphene device approaches 300000 cm^(2) V^(-1) s^(-1),which is desirable to explore the intrinsic properties of *** work provides an innovative and efficient route for fabricating suspended 2D materials,and we expect that it can be broadly used for studying intrinsic properties of 2D materials and in applications of hybrid active nanophotonic and electronic devices.

关键词： mechanical exfoliation photoluminescence Raman spectrum suspended 2D materials

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Continuous-variable cluster states in optical microresonator

Continuous-variable cluster states in optical microresonator

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IEEE Photonics Conference (IPC)

作者： Ze Wang Kangkang Li Yue Wang Xin Zhou Yinke Cheng Boxuan Jing Fengxiao Sun Jincheng Li Zhilin Li Qihuang Gong Qiongyi He Bei-Bei Li Qi-Fan Yang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics School of Physics Peking University Beijing China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing China Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan China Yangtze Delta Institute of Optoelectronics Peking University Nantong China

ISBN: (数字)9798350361957

ISBN: (纸本)9798350361964

We experimentally demonstrate reconfigurable and scalable continuous-variable cluster states by combining the Kerr microcombs with programmable bichromatic pumps within a single microresonator. The generated two-dimensional cluster states consist of 28 entangled modes in the frequency domain as required for universal quantum information processing.

关键词： Protocols Quantum entanglement Frequency-domain analysis Information processing Optical pumping Microcavities Nonlinear optics physics Photonics

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Robust Gaussian Process Regression method for efficient reaction pathway optimization: application to surface processes

arXiv

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arXiv 2023年

作者： Fang, Wei Zhu, Yu-Cheng Cheng, Yi-Han Hao, Yi-Ping Richardson, Jeremy O. Laboratory of Physical Chemistry ETH Zürich Zürich8093 Switzerland State Key Laboratory of Molecular Reaction Dynamics Center for Theoretical Computational Chemistry Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian116023 China State Key Laboratory for Artificial Microstructure and Mesoscopic Physics Frontier Science Center for Nano-optoelectronics School of Physics Peking University Beijing100871 China

Simulation of surface processes is a key part of computational chemistry that offers atomic-scale insights into mechanisms of heterogeneous catalysis, diffusion dynamics, as well as quantum tunneling phenomena. The most common theoretical approaches involve optimization of reaction pathways, including semiclassical tunneling pathways (called instantons). However, the computational effort can be demanding, especially for instanton optimizations with ab initio electronic structure. Recently, machine learning has been applied to accelerate reaction-pathway optimization, showing great potential for a wide range of applications. However, previous methods suffer from practical issues such as unfavorable scaling with respect to the size of the descriptor, and were mostly designed for reactions in the gas phase. We propose an improved framework based on Gaussian process regression for general transformed coordinates, which can alleviate the size problem. The descriptor combines internal and Cartesian coordinates, which improves the performance for modeling surface processes. We demonstrate with eleven instanton optimizations in three example systems that the new approach makes ab initio instanton optimization significantly cheaper, such that it becomes not much more expensive than a classical transition-state theory calculation. Copyright © 2023, The Authors. All rights reserved.

关键词： Computational chemistry

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Compact Turnkey Soliton Microcombs at Microwave Rates via Wafer-Scale Fabrication

arXiv

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arXiv 2025年

作者： Wang, Yuanlei Wang, Ze Lao, Chenghao Xu, Tianyu Cheng, Yinke Xie, Zhenyu Wang, Junqi Luo, Haoyang Zhou, Xin Ni, Bo Zhu, Kaixuan Liu, Yanwu Jin, Xing Wang, Min Liu, Jian-Fei Cao, Xuening Wang, Ting Gong, Qihuang Li, Bei-Bei Zhang, Fangxing Xiao, Yun-Feng Yang, Qi-Fan State Key Laboratory for Artificial Microstructure and Mesoscopic Physics Frontiers Science Center for Nano-optoelectronics School of Physics Peking University Beijing100871 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing100190 China Peking University Yangtze Delta Institute of Optoelectronics Jiangsu Nantong226010 China Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan030006 China

Soliton microcombs generated in nonlinear microresonators facilitate the photonic integration of timing, frequency synthesis, and astronomical calibration functionalities. For these applications, low-repetition-rate (f+) soliton microcombs are essential as they establish a coherent link between optical and microwave signals. However, the required pump power typically scales with f;+, and the device footprint scales with f,?, rendering low-f, soliton microcombs challenging to integrate within photonic circuits. This study designs and fabricates SigN4 microresonators on 4-inch wafers with highly compact form factors. The resonator geometries are engineered from ring to finger and spiral shapes to enhance integration density while attaining quality factors over 10’. Driven directly by an integrated laser, soliton microcombs with f, below 10 GHz are demonstrated via turnkey initiation. The phase noise performance of the synthesized microwave signals reaches -130 dBc Hz~* at 100 kHz offset frequency for 10 GHz carrier frequencies. This work enables the high-density integration of soliton microcombs for chip-based microwave photonics and spectroscopy applications. Copyright © 2025, The Authors. All rights reserved.

关键词： Microresonators

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Ultra-broadband soliton microcombs in resonantly-coupled microresonators

arXiv

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arXiv 2025年

作者： Zhu, Kaixuan Luo, Xinrui Wang, Yuanlei Wang, Ze Xu, Tianyu Qian, Du Cheng, Yinke Wang, Junqi Luo, Haoyang Liu, Yanwu Jin, Xing Zhou, Xin Wang, Min Liu, Jian-Fei Cao, Xuening Wang, Ting Gong, Qihuang Li, Bei-Bei Yang, Qi-Fan State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics School of Physics Peking University Beijing100871 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing100190 China Peking University Yangtze Delta Institute of Optoelectronics Jiangsu Nantong226010 China Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan030006 China

Soliton microcombs – equidistant spectral lines generated from nonlinear microresonators – have endowed integrated photonics with unprecedented precision and parallelization. However, generating broadband microcombs is challenged by the required pump power that scales quadratically with the number of comb lines. Here, we demonstrate that incorporating a resonant coupler passively enhances the effective pump power by several orders of magnitude, thereby expanding the soliton microcomb’s usable bandwidth by a factor of 3. Moreover, the resonant coupler enables unconventional tuning dynamics that facilitate thermally robust access to soliton states. Powered by an on-chip laser, the soliton microcomb delivers unprecedented spectral coverage. Our strategy overcomes the power constraints in generating broadband soliton microcombs and paves the way for their deployment in timing, metrology, and communications. Copyright © 2025, The Authors. All rights reserved.

关键词： Microresonators

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