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CLEO: Science and Innovations, S and I 2022

作者： Azeem, Farhan Trainor, Luke S. Gao, Ang Isarov, Maya Strekalov, Dmitry V. Schwefel, Harald G.L. The Dodd-Walls Centre for Photonic and Quantum Technologies New Zealand Department of Physics University of Otago 730 Cumberland Street Dunedin9016 New Zealand MOE Key Laboratory of Weak-Light Nonlinear Photonics TEDA Institute of Applied Physics School of Physics Nankai University Tianjin300457 China State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing100871 China

We report on the first ever titanium doped sapphire whispering-gallery laser with a record low threshold of 14.2 mW. Moreover, amplification is shown in the mode narrowing of a probe laser at 795 nm. © Optica Pub... 详细信息

ISBN: (纸本)9781557528209

关键词： Sapphire

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A review on the GaN-on-Si power electronic devices

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Fundamental Research 2022年第3期2卷 462-475页

作者： Yaozong Zhong Jinwei Zhang Shan Wu Lifang Jia Xuelin Yang Yang Liu Yun Zhang Qian Sun Key Laboratory of Nano-devices and Applications Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences(CAS)Suzhou 215123China School of Electronics and Information Technology Sun Yat-Sen UniversityGuangzhou 510006China State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China Institute of Semiconductor Chinese Academy of SciencesBeijing 100083China

The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si *** article provides a concise introduction,review,and outlook of the research developments of GaN-on-Si power device *** comprehensive review has discussed the crucial issues in the state-of-the-art device technology based on both GaN materials epitaxy including stress control and point defects study,and device fabrication including normally offsolutions like Cascode,trench MIS-gate,and p-GaN *** reliability and other common fabrication issues in GaN high electron mobility transistors(HEMTs)are also ***,we give an outlook on the GaN-on-Si power devices from two aspects,namely high frequency,and high power GaN ICs,and GaN vertical power devices.

关键词： GaN-on-Si Epitaxy Power device Transistor Diode Enhancement mode

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Atomistic Understanding of Dislocation Climb in Nitride Semiconductors: Role of Asymmetric Jogs

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Physical Review Letters 2025年第5期134卷 056102-056102页

作者： Han Yang Xiangru Han Xuelin Yang Yingming Song Beile Chen Zhenghao Chen Guangxu Ju Fujun Xu Ning Tang State Key Laboratory of Artificial Microstructure and Mesoscopic Physics Nano-optoelectronics Frontier Center of Ministry of Education School of Physics Peking University Beijing 100871 People’s Republic of China Beijing Computational Science Research Center Beijing 100193 People’s Republic of China Peking University Yangtze Delta Institute of Optoelectronics Nantong 226010 Jiangsu People’s Republic of China

Effective control of dislocation climb is of fundamental interest and practical importance in tuning the mechanical and electronic properties of semiconductors. However, it remains a big challenge due to the lack of a clear understanding of its inherent mechanism, in particular, in the nitride semiconductors. In this Letter, the atomic-scale climb process of a single dislocation in GaN is observed for the first time, which undergoes an alternating five- and nine-atomic-ring transformation. Combined with first-principles calculations, we reveal that the jogs exhibiting asymmetric atomic configurations play an unexpected role in determining the different dislocation climb behaviors in GaN. Interestingly, tuning the Fermi-level position by electroactive dopants can selectively generate different species of jogs, which can consequently manipulate the dislocation climb behaviors and dislocation dissociation in a controllable way. Our findings not only highlight the significant role the asymmetric jogs play in the dislocation climb in nitrides, but also suggest a clear routine to control dislocation dynamics in semiconductors.

关键词： Gallium nitride

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Taming Brillouin Optomechanics Using Supermode Microresonators

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Physical Review X 2024年第1期14卷 011056-011056页

作者： Min Wang Zhi-Gang Hu Chenghao Lao Yuanlei Wang Xing Jin Xin Zhou Yuechen Lei Ze Wang Wenjing Liu Qi-Fan Yang Bei-Bei Li Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China University of Chinese Academy of Sciences Beijing 100049 China State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics School of Physics Peking University Beijing 100871 China Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan 030006 China Songshan Lake Materials Laboratory Dongguan 523808 Guangdong China

Electrostrictive Brillouin scattering provides a ubiquitous mechanism to optically excite high-frequency (>10 GHz), bulk acoustic phonons that are robust to surface-induced losses. Resonantly enhancing such photon-phonon interactions in high-Q microresonators has spawned diverse applications spanning microwave to optical domains. However, tuning both the pump and scattered waves into resonance usually comes with the cost of photon confinement or modal overlap, leading to limited optomechanical coupling. Here, we introduce Bragg scattering to realize strong bulk optomechanical coupling in the same spatial modes of a micron-sized supermode microresonator. A single-photon optomechanical coupling rate up to 12.5 kHz is demonstrated, showing more than 10 times improvement than other devices. Low-threshold phonon lasing and optomechanical strong coupling are also observed for the 10.2-GHz mechanical mode. Our work establishes a compact and efficient paradigm to optically control bulk acoustic phonons, paving the way toward optomechanical coupling at the single-photon level and providing a powerful engine for large-scale integration of quantum networks in which quantum states are massively transferred and stored.

关键词： Brillouin scattering & spectroscopy Nonlinear optics Optomechanics Photonics Cavity resonators

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Coexistence of large anomalous Hall effect and topological magnetic skyrmions in a Weyl nodal ring ferromagnet Mn5Ge3

arXiv

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arXiv 2024年

作者： Li, Hang Zhou, Feng Ding, Bei Chen, Jie Song, Linxuan Yang, Wenyun Lau, Yong-Chang Yang, Jinbo Li, Yue Jiang, Yong Wang, Wenhong Institute of Quantum Materials and Devices School of Electronics and Information Engineering Tiangong University Tianjin300387 China Institute of Physics Chinese Academy of Sciences Beijing100190 China State Key Laboratory for Artificial Microstructure & Mesoscopic Physics School of Physics Peking University Beijing100871 China

Topological magnetic materials are expected to show multiple transport responses because of their unusual bulk electronic topology in momentum space and topological spin texture in real space. However, such multiple topological properties-hosting materials are rare in nature. In this work, we reveal the coexistence of a large tunable anomalous Hall effect and topological magnetic skyrmions in a Weyl nodal ring ferromagnet Mn5Ge3, by using electrical transport and Lorentz transmission electronic microscope (TEM) measurements. It was found that the intrinsic anomalous Hall conductivity (AHC) can reach up to 979.7 S/cm with current along [120] and magnetic field along [001] of the Mn5Ge3 single crystals. Our theoretical calculations reveal that the large AHC is closely related with two Weyl nodal rings in band structure near the Fermi level and is strongly modified by the content of Ge. Moreover, our Lorentz-TEM images and micromagnetic simulation results, together with the sizable topological Hall effect clearly point to the robust formation of magnetic skyrmions over a wide temperature-magnetic field region. These results prove Mn5Ge3 as a rare magnetic topological nodal-line semimetal with great significance to explore novel multiple topological phenomena, which facilitate the development of spintronics. © 2024, CC BY.

关键词： Single crystals

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Quantum noise of dark pulse microcombs

Quantum noise of dark pulse microcombs

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CLEO: QELS_Fundamental Science, QELS 2022

作者： Lao, Chenghao Jin, Xing Chang, Lin Xie, Weiqiang Shu, Haowen Wang, Xingjun Bowers, John E. Yang, Qi-Fan State Key Laboratory for Artificial Microstructure and Mesoscopic Physics Frontiers Science Center for Nano-Optoelectronics School of Physics Peking University Beijing100871 China Department of Electrical and Computer Engineering University of California Santa BarbaraCA93106 United States State Key Laboratory of Advanced Optical Communications System and Networks Department of Electronics School of Electronics Engineering and Computer Science Peking University Beijing100871 China

We investigate the fundamental timing jitter of dark pulse microcombs generated in an AlGaAs microresonator, where the quantum-limited frequency noise of the 91-GHz repetition rate is measured to be 0.5 Hz2/Hz. ©... 详细信息

ISBN: (纸本)9781557528209

关键词： Aluminum gallium arsenide

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Electrical and thermoelectric study of two-dimensional crystal of NbSe2

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Chinese physics B 2020年第8期29卷 137-142页

作者： Xin-Qi Li Zhi-Lin Li Jia-Ji Zhao Xiao-Song Wu State Key Laboratory for Artificial Microstructure and Mesoscopic Physics Beijing Key Laboratory of Quantum DevicesPeking UniversityBeijing 100871China Frontiers Science Center for Nano-optoelectronics and Collaborative Innovation Center of Quantum Matter Beijing 100871China

We report experimental investigation of the resistivity and Nernst effect in two-dimensional(2D)NbSe2 crystals.A strongly enhanced Nernst effect,100 times larger than that in bulk NbSe2,caused by moving vortices is observed in thin *** is found that in the low temperature,high magnetic field regime,pinning effects show little dependence on the thickness and resistivity of the superconductor *** Nernst signals persist above the superconducting transition,suggesting that the Nernst effect is a sensitive probe to superconducting fluctuations.A magnetic field induced superconductor-insulator transition(SIT)is evident,which is surprising in that such a SIT usually takes place in disordered dirty superconductors,while our samples are highly crystalline and close to the clean ***,our results expand the scope of SIT into 2D crystal clean superconductors.

关键词： two-dimensional superconductivity Nernst effect superconducting fluctuations superconductor-insulator transition

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Improved FAPbI3 Solar Cell Device by Kinetics Negotiation via Hydrates

Improved FAPbI3 Solar Cell Device by Kinetics Negotiation vi...

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第十届新型太阳能材料科学与技术学术研讨会

作者： Ryan Taoran Wang Fan Xu SongShan Lake Materials Lab Institute of Physics Chinese Academy of Sciences State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of PhysicsFrontiers Science Center for Nano-optoelectronics & Collaborative Innovation Center of Quantum MatterPeking University

The instability of formamidinium lead iodide（FAPbI） perovskite has limited its application in renewable energy development,despite the highest power conversion efficiency（PCE） it exhibited.A step forward has been achieved here by negotiating the hydration kinetics via adjusting the moisture partial *** stable hydrate was restricted to precipitate only at the surrounding of the grain boundary area under the influence of the moisture partial pressure,avoiding the large strain created by the complete hydration reaction,which preserved the condensed morphology of the perovskite *** PCE of such device was thus enhanced to more than 10%,as opposed to the value of 0.32% in the previous results,with comparable stability to the pure moisture-stable hydrate-based film,which not only provided a promising solution for the lifetime challenge,but also presented fresh inspiration for the thin film growth kinetics.

关键词： Perovskite stability hydrate reaction kinetic control

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Sub-milliwatt coherent mieroeomb generation

Sub-milliwatt coherent mieroeomb generation

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2022 Conference on Lasers and Electro-Optics, CLEO 2022

作者： Chang, Lin Shu, Haowen Lao, Chenghao Shen, Bitao Xie, Weiqiang Zhang, Xuguang Jin, Ming Tao, Yuanshun Chen, Ruixuan Tao, Zihan Yu, Shaohua Yang, Qi-Fan Wang, Xingjun Bowers, John E. Department of Electrical and Computer Engineering University of California Santa BarbaraCA93106 United States State Key Laboratory of Advanced Optical Communications System and Networks Peking University Beijing100871 China State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School and Physics Peking University Beijing100871 China Peng Cheng Laboratory Shenzhen518055 China Frontiers Science Center for Nano-Optoelectronics Peking University Beijing100871 China

We demonstrate coherent microcomb generation based on an AlGaAs-on-insulator microresonator operating at sub-milliwatt pump power regime, that can be directly driven by on-chip laser. © Optica Publishing Group 20... 详细信息

ISBN: (纸本)9781957171050

关键词： Aluminum gallium arsenide

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Sub-milliwatt coherent microcomb generation

Sub-milliwatt coherent microcomb generation

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CLEO: Science and Innovations, S and I 2022

作者： Chang, Lin Shu, Haowen Lao, Chenghao Shen, Bitao Xie, Weiqiang Zhang, Xuguang Jin, Ming Tao, Yuanshun Chen, Ruixuan Tao, Zihan Yu, Shaohua Yang, Qi-Fan Wang, Xingjun Bowers, John E. Department of Electrical and Computer Engineering University of California Santa BarbaraCA93106 United States State Key Laboratory of Advanced Optical Communications System and Networks Peking University Beijing100871 China State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School and Physics Peking University Beijing100871 China Peng Cheng Laboratory Shenzhen518055 China Frontiers Science Center for Nano-optoelectronics Peking University Beijing100871 China

ISBN: (纸本)9781557528209

关键词： Aluminum gallium arsenide

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