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International Conference on (ICEPT) Electronic Packaging Technology

作者： Lei Shi Lin Chen David Wei Zhang Evan Liu Jin-Xin Huang State Key Laboratory of ASIC and System Fudan University Shanghai China Nantong Fujistsu Microelectronics Co LTD. Nantong China

ISBN: (纸本)9781509013975

Typical controlled collapse chip connection (C4) bump structurally composed of solder bump, Ni UBM and Cu/Ti sputtered film on the top side of Si wafer in which polyimide film patterned and coated onto wafer as a buffer layer between substrate and UBM for stress relief. C4 bump structure is widely used in high-performance device of semiconductor package industries for many years and has achieved good reliability performance. In the past experience, stress-induced polyimide crack would happen on low-k IC package and be associated with inter-layer dielectric (ILD) cracking during thermal process and resulting in reliability problem. In order to resolve polyimide cracking problem, this preliminary study is attempted to optimize the bumping process based on the experimental of C4 bump structure with Copper pad as polyimide underneath to simulate the key condition of bumping process. Three key parameters in process, curing temperature, reflow peak temperature and reflow cooling rate, were considered to differentiate the influence degree related to the thermal stress from coefficient of thermal expansion (CTE) mismatch. Focus ion beam (FIB) and finite element methods were separately employed for cranny observation and stress modeling. The result exhibits the cured polyimide cranny formed under the condition of higher curing temperature, higher reflow cooling rate. The dominant factor is polyimide curing temperature (PCT), and followed by reflow peak temperature (RPT) and reflow cooling rate (RCR), sequentially. The cranny on polyimide propagated to and around the round-shaped Ni undercut spot after reflow due to the thermal stress arising from CTE mismatch between the polyimide and contained metals. Low curing temperature (350°C) with lower modulus of elasticity, low reflow temperature (240°C) and slow cooling rate (2.9°C/s) allow polyimide to absorb more strain energy and flexibly adjust internal stress far from fracture stress.

关键词： Polyimides Cooling Buffer layers Dielectrics Chemicals Stability analysis Thermal stability

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High-speed realization of parallel algorithm for hash computation on multicore cryptographic processor

High-speed realization of parallel algorithm for hash comput...

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International Conference on Integrated Circuits and Microsystems (ICICM)

作者： Qiang Dai Zibin Dai Zhouchuang Wang Wei Li Department of Microelectronics Institute of Information Science and Technology Zhengzhou China State Key Lab of ASIC and System Fudan University Shanghai China

ISBN: (纸本)9781509028153

Hashing algorithms are used widely in information security area. Having studied the characteristics of traditional cryptographic hashing function and considered the features of multi-core cryptographic processor, this paper proposes a parallel algorithm for hash computation well-suited to multicore cryptographic processor. The algorithm breaks the chain dependencies of the standard hash function by implementing recursive hash to get faster hash implementation. We discuss the theoretical foundation for our mapping framework including security measure and performance measure. The experiments are performed on a PC with a PCIE card including multi-core cryptographic processor as the cipher processing engine. The results show a performance gain by an approximate factor of 7.8 when running on the 8-core cryptographic processor.

关键词： Multicore processing Parallel algorithms Standards Ciphers Micromechanical devices

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Design and implementation of low-cost SM4 for consumer electronic product

Design and implementation of low-cost SM4 for consumer elect...

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IEEE ICCE-China Workshop (ICCE-China)

作者： Kunsong Zhu Lichao Zhang Zibin Dai Wei Li Department of Microelectronics Zhengzhou Institute of Information Science and Technology Zhengzhou China State Key Lab of ASIC and System Fudan University Shanghai China

ISBN: (纸本)9781509061945

With the popularity of Internet of Things technology in consumer electronic product, the security of data in these devices is becoming increasingly important. However, common encryption schemes are not well suited for these resource-constrained devices. To solve this problem, a low-cost SM4 implementation structure based on resource reutilization is proposed in this paper. The round function and key expansion use the core module in serial and all the round keys generated on-the-fly. Composite field S-box and barrel shifter allow the circuit area to be further reduced. key store & check module and CK generate module can improve the efficiency of decode mode. The result shows that only 2756 GE is used in our design on SMIC 0.18 um CMOS technology, and it can achieve 318 of FOM (Figure of Merit). Therefore, it is quite a good way to protect the security of data in consumer electronic product.

关键词： Encryption Decoding Consumer electronics Algorithm design and analysis Ciphers Conferences

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A 0.23 pJ 11.05-bit ENOB 125-MS/s pipelined ADC in a 0.18 μm CMOS process

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Journal of Semiconductors 2015年第5期36卷 170-174页

作者：王勇张剑云尹睿赵宇航张卫 State Key Laboratory of ASIC & System School of MicroelectronicsFudan University Shanghai Integrated Circuit Research and Development Center Co. Ltd.

This paper describes a 12-bit 125-MS/spipelinedanalog-to-digitalconverter（ADC）thatisimplemented in a 0.18 #m CMOS process. A gate-bootstrapping switch is used as the bottom-sampling switch in the first stage to enhance the sampling linearity. The measured differential and integral nonlinearities of the prototype are less than 0.79 least significant bit （LSB） and 0.86 LSB, respectively, at the full sampling rate. The ADC exhibits an effective number of bits （ENOB） of more than 11.05 bits at the input frequency of 10.5 MHz. The ADC also achieves a 10.5 bits ENOB with the Nyquist input frequency at the full sample rate. In addition, the ADC consumes 62 mW from a 1.9 V power supply and occupies 1.17 mm2, which includes an on-chip reference buffer. The figure-of-merit of this ADC is 0.23 p J/step.

关键词： analog-to-digital converter sample-and-hold Nyquist rate input frequency

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Design of high reliability RF-LDMOS by suppressing the parasitic bipolar effect using enhanced p-well and double epitaxy

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Journal of Semiconductors 2015年第6期36卷 93-98页

作者：徐向明黄景丰遇寒钱文生周正良韩波王勇王鹏飞张卫 State Key Laboratory of ASIC and System School of Microelectronics Fudan University HuaHong Grace Semiconductor Manufacturing Corporation School of Computer and Information Engineering Fuyang Teachers College

A laterally diffused metal-oxide-semiconductor （LDMOS） device design with an enhanced p-well and double p-epitaxial structure is investigated for device ruggedness improvement while keeping its high device per- formance under high frequency. Based upon the device design, radio-frequency （RF） LDMOS transistors for GSM （global system for mobile communication） application have been fabricated by using 0.35/zm CMOS technolo- gies. Experimental data show that the proposed device achieves a breakdown voltage of 70 V, output power of 180 W. The RF linear gain is over 20 dB and the power added efficiency （PAE） is over 70% with the frequency of 920 MHz. In particular, it can pass the 20 ： 1 voltage standing wave ratio （VSWR） load mismatch biased at drain DC supply voltage of 32 V and output power at 10-dB gain compression point （P10dB）. The device ruggedness has been remarkably improved by using the proposed device structure.

关键词： RF power LDMOS semiconductor device ruggedness reliability

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Revealing electronic nature of broad bound exciton bands in two-dimensional semiconducting WS2 and MoS2

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Physical Review Materials 2017年第7期1卷 074001-074001页

作者： Jingzhi Shang Chunxiao Cong Xiaonan Shen Weihuang Yang Chenji Zou Namphung Peimyoo Bingchen Cao Mustafa Eginligil Wei Lin Wei Huang Ting Yu Institute of Flexible Electronics Northwestern Polytechnical University (NPU) 127 West Youyi Road Xi’an 710072 China Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 State Key Laboratory of ASIC & System School of Information Science and Technology Fudan University Shanghai 200433 China Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM) National Jiangsu Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 China Fujian Provincial Key Laboratory of Semiconductor Materials and Applications Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices Department of Physics Xiamen University Xiamen 361005 China Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM) Nanjing University of Posts and Telecommunications Nanjing 210023 Jiangsu China

Owing to unique electronic, excitonic, and valleytronic properties, atomically thin transition metal dichalcogenides are becoming a promising two-dimensional (2D) semiconductor system for diverse electronic and optoelectronic applications. In an ideal 2D semiconductor, efficient carrier transport is very difficult because of lacking free charge carriers. Doping is necessary for electrically driven device applications based on such 2D semiconductors, which requires investigation of electronic structure changes induced by dopants. Therefore probing correlations between localized electronic states and doping is important. Here, we address the electronic nature of broad bound exciton bands and their origins in exfoliated monolayer (1L) WS2 and MoS2 through monitoring low-temperature photoluminescence and manipulating electrostatic doping. The dominant bound excitons in 1L WS2 vary from donor to acceptor bound excitons with the switching from n- to p-type doping. In 1L MoS2, two localized emission bands appear which are assigned to neutral and ionized donor bound excitons, respectively. The deep donor and acceptor states play critical roles in the observed bound exciton bands, indicating the presence of strongly localized excitons in such 2D semiconductors.

关键词： Electronic structure Excitons 2-dimensional systems Optical microscopy

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Investigation of chemical vapor deposited graphene film on oxide substrate

Investigation of chemical vapor deposited graphene film on o...

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Chinese Materials Congress, CMC 2014

作者： Huang, Tao Chen, Lin Sun, Qing-Qing Zhou, Peng Zhang, David Wei State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China

ISBN: (纸本)9783038353942

Graphene is a novel two dimensional material with exceptional properties. Chemical vapor deposition of graphene on metal substrates is widely used to prepare high quality graphene film. However, the graphene films need to be transferred to oxide substrates for device applications. A chemical vapor deposition approach for direct growth of graphene films on zinc oxide was demonstrated in the present investigation. Raman spectra were used to characterize the grown graphene films. The impact of the growth temperature, time and gas flow ratio on the layer number and crystallite size of graphene was investigated. © (2015) Trans Tech Publications, Switzerland.

关键词： Chemical vapor deposition

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Investigation of self-heating effect in SOI tunnel field-effect transistor 11

Investigation of self-heating effect in SOI tunnel field-eff...

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11th IEEE International Conference on Advanced Semiconductor Integrated Circuits (asic), asicON 2015

作者： Qian, C. Shi, Mao-Lin Chen, Lin Sun, Q.Q. Zhou, Peng Ding, S.J. Zhang, D.W. State Key Laboratory of ASIC and System Schoolt of Microelectronics Fudan University Shanghai200433 China

ISBN: (纸本)9781479984831

The built-in tunnel barrier in Tunneling Field Effect Transistors results in a low ON current. As an excellent dielectric isolation technology, silicon-on-insulator (SOI) technology makes TFET exhibit a higher ON current ratio. However, due to the low thermal conductivity of the buried SiO2 layer, heat dissipation and self-heating effect become serious issues of most SOI devices. In this paper, self-heating effect in SOI-TFET is investigated by using the SILVACO TCAD tools. The influences caused by structural characteristics on the self-heating effect are discussed. Furthermore, the impact of environmental temperature on the performance of the SOI-TFET device is also discussed with a wide range from 300 K to 500 K. Simulation results demonstrate that SOI-TFET has weak self-heating effect due to the Band-to-Band tunneling (BTBT) operating mechanism. Besides, the drive current of SOI-TFET exhibits a positive variation with increasing temperature which is contrary to the SOI-MOSFET. © 2015 IEEE.

关键词： Silica

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Design and fabrication of structural color by local surface plasmonic meta-molecules

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中国物理B（英文版） 2015年第8期24卷 239-243页

作者： Ma Ya-Qi Shao Jin-Hai Zhang Ya-Feng Lu Bing-Rui Zhang Si-Chao Sun Yan Qu Xin-Ping State Key Laboratory of ASIC and System School of Information Science and Engineering Fudan University Shanghai 200433 China Department of Physics Fudan University Shanghai 200433 China Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China State Key Laboratory of ASIC and System Fudan University Shanghai 200433 China

In this paper, we propose a new form of nanostructures with Al film deposited on a patterned dielectric material for generating structural color, which is induced by local surface plasmonic resonant (LSPR) absorption in sub-wavelength-indented hole/ring arrays. Unlike other reported results obtained by using focus ion beam (FIB) to create metallic nanostructures, the nano-sized hole/ring arrays in Al film in this work are replicated by high resolution electron beam lithography (EBL) combined with self-aligned metallization. Clear structural color is observed and systematically studied by numerical simulations as well as optical characterizations. The central color is strongly related to the geometric size, which provides us with good opportunities to dye the colorless Al surface by controlling the hole/ring dimensions (both diameter and radius), and to open up broad applications in display, jewelry decoration, green production of packing papers, security code, and counterfeits prevention.

关键词： structural color local surface plasmonic resonant absorption sub-wavelength metal metamaterial high resolution electron beam lithography

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Temperature-dependent optical response of phase-only nematic liquid crystal on silicon devices

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Chinese Optics Letters 2016年第11期14卷 85-89页

作者：张紫辰 Huan Xu 杨海宁尤政初大平 Institute of Microelectronics Chinese Academy of Sciences Electrical Engineering Division Department of EngineeringUniversity of Cambridge State Key Laboratory of Precision Measurement Technology and Instruments Collaborative Innovation Center for Micro/Nano FabricationDevice and System Department of Precision Instrument Tsinghua University

Wavelength-dependent birefringence and dielectric *** major optical properties of the nematie liquid crystal materials used in phase-only liquid crystal on silicon（LCOS） devices,are measured as a function of operating *** dynamic phase modulation depth and threshold voltage of these phase-only LCOS devices are also measured in the corresponding temperature range and compared with theoretical *** results show that the dynamic response time can he reduced significantly by an appropriate increase ol device operative temperature,while the necessary device elements,such as phase modulation depth and threshold voltage,can be maintained at the same time.

关键词： Birefringence Dielectric materials Display devices Liquid crystals Liquids Modulation Optical properties Phase modulation Threshold voltage

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