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IEEE Electron Device Letters 2025年第5期46卷 693-696页

作者： Wang, Feixiong Zhang, Yadong Bao, Yunjiao Liu, Shuang Zhang, Xuexiang Mao, Shujuan Ding, Mingzheng Liu, Jinbiao Yao, Jiaxin Zhang, Qingzhu Yin, Huaxiang Institute of Microelectronics of Chinese Academy of Sciences State Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing100029 China University of Chinese Academy of Sciences School of Integrated Circuits Beijing100049 China

In this work, 2-tier Monolithic 3-Dimentional (M3D) integrated FinFETs and circuits are fabricated based on a low-temperature (≤ 500~ C) silicide dopant segregation Schottky Source/Drian (SDSS S-D) technology. By forming NiPt silicide followed by B/P implantation and optimizing annealing on top-tier fins, a sharpened Schottky Barrier of the silicide and a high dopant segregation concentration of the impurities are obtained in the improved silicide S-D with maximum process temperature below 500~ C. As a result, Low-T 2-tier M3D FinFETs are obtained with I ON= 646.4~μ A/μ m for PMOS and I ON = 450.6~μ A/μ m for NMOS at L G=500 nm and a record I ON=1.84 mA/μ m is achieved for PMOS at L G =25 nm under normalized footprint. Furthermore, M3D inverter, ring oscillators, as well as 6T SRAM with this technique are demonstrated, which is promising to provide an effective and low-cost method to achieve low-temperature high- performance silicon circuits in M3D applications. © 1980-2012 IEEE.

关键词： FinFET

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Linear Fine-Tuning VFB and Improved Interface via Novel Al2O3 Atomic in-situ Dipole Buffer Layer (DBL) in ALD La2O3 Dipole-First Stack

IEEE Electron Device Letters

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IEEE Electron Device Letters 2025年第5期46卷 825-828页

作者： Wei, Yanzhao Yao, Jiaxin Wang, Yu Zhang, Qingzhu Gao, Jianfeng Wang, Xiaolei Luo, Jun Yin, Huaxiang Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing10029 China University of Chinese Academy of Sciences School of Integrated Circuits Beijing100049 China

In this letter, a novel Al2O3 atomic in-situ dipole buffer layer (DBL) technique is proposed for achieving VFB linear fine-tunability and interface improvement in La2O3 dipole-first gate stack. 10 VFB levels with minimum 9 mV linear fine-tuning step in 400 mV range are achieved by manipulating sub-5-Å Al2O3 between SiO2 interfacial layer (IL) and La2O3 dipole layer in metal-oxide-semiconductor capacitors (MOSCAPs). Furthermore, the Si/SiO2 interface is improved with more than 60.3% interface trap density (Dit) decrease by suppressing La-Si interdiffusion with Al-DBL. A mechanism of La-dipole fine-tuning is proposed and indicates that the Al-DBL is one of the promising techniques for multi-VT integration in future NS GAA-FETs. © 1980-2012 IEEE.

关键词： Aluminum oxide

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Super-resolution imaging using surface plasmon resonance cavity lithography

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Optics Express 2025年第8期33卷 17976-17989页

作者： Rui, Dinghai Zhang, Libin Ding, Huwen Shen, Hao Wei, Yayi Su, Yajuan EDA Center Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits University of Chinese Academy of Sciences Beijing100049 China State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing100049 China

Surface plasmonic lithography (SPL) utilizes the lateral propagation of light on the surface of metals, which generates transverse excitation, resulting in evanescent waves that participate in imaging to break the diffraction limit. However, a challenge is the difficulty in achieving stable evanescent wave imaging. This paper proposes a surface plasmon resonance cavity lithography (SPRCL) technique, which achieves super-resolution imaging and explores the effects of various factors on this technique. The general dispersion relation for surface plasmon polaritons in a double-resonator cavity structure is derived using traditional electromagnetic field theory. Through optical transfer function (OTF) analysis, the essence of the super-resolution imaging phenomenon is revealed—the OTF of the resonator-based super-resolution imaging system exhibits ultra-high transfer efficiency in the high-frequency evanescent wave region. In the numerical simulation, illumination light with a wavelength of 436 nm and a mask with a period of 740 nm were used to successfully obtain a feature size of 26.4 nm (∼1/17 light wavelength) and period of 52.8 nm. This result is smaller than the resolution of a conventional 193 nm immersion lithography machine. Additionally, at wavelengths of 532 nm and 633 nm, this technique achieved a stripe resolution of less than 1/11 light wavelength, with a lithography contrast greater than 0.9 and a normalized image log-slope (NILS) greater than 1.6. Analysis indicates that parameters including the mask duty cycle, incident angle, SiO2 thickness of the photoresist (PR) upper layer, and PR layer thickness significantly influence super-resolution imaging performance. Notably, the PR layer thickness enables optical resolution tuning without altering metal grating dimensions. Compared with traditional plasmonic lithography, this approach demonstrates enhanced pattern uniformity and contrast while exhibiting improved process robustness against parameter variatio

关键词： Surface plasmon resonance

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Linear Tuning of Positive Threshold Voltage in IGZO Thin-Film Transistors via Gate Dielectric Stack Engineering

IEEE Electron Device Letters

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IEEE Electron Device Letters 2025年第5期46卷 781-784页

作者： Yan, Gangping Yang, Yanyu Tai, Lu Chen, Yuting Ma, Xueli Xiang, Jinjuan Xu, Gaobo Wang, Guilei Yin, Huaxiang Zhao, Chao Beijing Superstring Academy of Memory Technology Beijing100176 China Institute of Microelectronics of the Chinese Academy of Sciences State Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing100029 China University of Chinese Academy of Sciences School of Integrated Circuits Beijing100049 China

The positive threshold voltage (VTH) tuning in InGaZnO (IGZO) thin-film transistors (TFTs) has become an urgent issue. In this work, the effect of different ultrathin gate dielectric interlayers (ILs) inserted between the high-κ HfO2 and IGZO is investigated based on the pristine VTH of +0.064 V optimized by IGZO sputtering and post-annealing. By specifically combining varying HfO2 thicknesses and IL types, this initial VTH is linearly modulated to +0.528 V in IGZO devices without noticeable sub-threshold swing (SS) and mobility degradation. Attributed to the dipole and fixed charge modulation at the interface, the devices with 7-nm HfO2 and 2-nm SiO2 IL exhibit optimal results, including the most positive VTH, a decent mobility of 12 cm2/Vċ s, a well-maintained SS of 84.7 mV/dec, and promoted positive and negative bias stress (PBS/NBS) stability. This VTH modulation technique provides useful guidance for 3D integration such as IGZO 3D-DRAM with high performance. © 1980-2012 IEEE.

关键词： Thin film transistors

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Arbitrary hue-brightness structural colors with high saturation generated by anisotropic metasurfaces

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Photonics Research 2025年第3期13卷 772-780页

作者： CHONG WANG HE LI LONGJIE LI XIAO SHANG SHENGQIONG CHEN HUIWEN XUE PEIWEN ZHANG JIEBIN NIU YONGLIANG ZHANG LINA SHI State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences Department of Electronic and Optical Engineering Space Engineering University State Key Laboratory of Semiconductor Physics and Chip Technologies Institute of SemiconductorsChinese Academy of Sciences

Structural colors have always attracted much attention due to important applications in display devices, imaging security certification, optical data storage, and so on. The brightness of structure colors, as the carrier of chiaroscuro information, is the key to making images appear stronger in the spatial and three-dimensional ***, relatively little work has been done on the control of the color brightness, and the reported structures are complex and difficult to fabricate. Here, we demonstrate a low-aspect-ratio anisotropic metasurface consisting of a PMMA film patterned by arrays of elliptical-shaped holes clamped by two thin aluminum films. By utilizing localized surface plasmon resonances, we realize a three-dimensional (3D) HSB (hue, saturation, and brightness)structure color with independent brightness control and enhance the cross-polarization reflection, covering approximately 120%of the s RGB color gamut. It is shown that the ratio of the major and minor axes leads to the independent control of brightness of the structural colors. The nanoprinting of HSB images with smooth brightness transitions is demonstrated through elaborate design of the metasurface geometry parameters and CMOScompatible micro–nano fabrication process. Our findings will facilitate the broad range of 3D nanoprinting and modern advanced display applications.

关键词： Electron beam lithography Localized surface plasmon resonance Optical data storage Scanning electron microscopy Structural color Thin films

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Single-photon radiation enhancement and far-field regulation based on twist angle defects lattice cavities

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Optics Express 2025年第8期33卷 17903-17913页

作者： Zhang, Haiping Wang, Yuxing Su, Rongbin State Key Laboratory of Optoelectronic Materials and Technologies School of physics Sun Yat-Sen University Guangzhou510000 China College of Integrated Circuits and Optoelectronic Chips Shenzhen Technology University Guangdong Shenzhen518118 China

Efficient and versatile single-photon sources are crucial components for practical quantum communication. The weak coupling of micro-nano photonic structures with quantum dots significantly enhances single-photon performance by accelerating the photon radiation rate, regulating the far-field distribution, and enhancing photon collection efficiency. We propose a novel defect design, twist angle defects (TADs), which greatly improve far-field radiation patterns based on the band-folding principle. Through systematic optimization of the structural parameters, the TADs lattice cavity has achieved a collection efficiency approaching 90% and a Purcell factor exceeding 40. Furthermore, this cavity exhibits excellent robustness, with tolerances for positional shifts and hole radius variations being ±100 nm and ±5 nm, respectively. The TADs lattice cavity is fully compatible with existing micro-nano processing techniques, offering a promising new device for future quantum information experiments. © 2025 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement.

关键词： Semiconductor quantum dots

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Thickness-dependent magnetic property of FeNi thin film grown on flexible graphene substrate

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Chinese Physics B 2025年第2期34卷 448-452页

作者： Suixin Zhan Shaokang Yuan Yuming Bai Fu Liu Bohan Zhang Weijia Han Tao Wang Shengxiang Wang Cai Zhou State Key Laboratory of New Textile Materials and Advanced Processing Technologies Wuhan Textile UniversityWuhan 430200China School of Mathematical and Physical Sciences Wuhan Textile UniversityWuhan 430200China School of Integrated Circuits Huazhong University of Science and TechnologyWuhan 430074China Key Laboratory for Magnetism and Magnetic Materials Ministry of EducationLanzhou UniversityLanzhou 730000China

Electronics over flexible substrates offer advantages of flexibility, portability and low cost, and promising applications in the areas of energy, information, defense science and medical service. In recent years, tremendous progress has been witnessed in the development of flexible wearable devices that can be potentially massively deployed. Of particular interest are intelligent wearable devices, such as sensors and storage cells, which can be integrated by flexible magnetoelectronic devices based on magnetic thin films. To examine this further, the magnetic properties of FeNi thin films with different thicknesses grown on flexible graphene substrate are investigated at room temperature. The coercivity increases with increasing thicknesses of FeNi thin film, which can be attributed to the increase of grain size and decrease of surface roughness. Moreover, the thickness modulated magnetic property shows a magnetic anisotropy shift increase with varying thicknesses of FeNi thin film by using measurements based on ferromagnetic resonance, which further enhances the resonance frequency. In addition, the resonance peak is quite stable after bending it for ten cycles. The result is promising for the future design of flexible magnetoelectronic devices.

关键词： resonance frequency FeNi thin film flexible graphene substrate magnetic property

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High-Performance Dual-Gate In-Sn-Zn-O Thin-Film Transistors With Optimized Gate Dielectrics

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IEEE Journal of the Electron Devices Society 2025年

作者： Liao, Fuxi Wu, Zijing Lu, Congyan Yang, Guanhua Chen, Kaifei Liu, Menggan Lu, Wendong Mao, Naide Li, Zihan Zhang, Xuanming Zhang, Kaiping Lu, Nianduan Li, Ling University of Science and Technology of China School of Microelectronics Hefei230026 China Institute of Microelectronics of Chinese Academy of Sciences State Key Laboratory of Fabrication Technologies for Integrated Circuits China State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China

*** this study, the effect of the top gate insulator (TGI) deposition conditions on the electrical performance of dual-gate (DG) amorphous InSnZnO (ITZO) thin film transistors (TFTs) is experimentally investigated. It is found that compared to high-temperature deposited TGI, the ITZO TFTs with lower-temperature-deposited (1000C) Al2O3 TGI exhibited an improved electrical characteristic, including higher on/off ratio, lower subthreshold swing (SS), etc. Due to the low bonding energy, the Sn-O bond is easily broken during the high-temperature TGI deposition and then more oxygen vacancies generate, doping the ITZO channel failed to turn off in the switching operation of transistor. Based on these insights, high-performance DG ITZO TFTs are fabricated with optimized TGI, achieving a low sub-threshold swing of 141 mV/decade, an ultrahigh on/off current ratio over 109, a high mobility (μ) of 60.8 cm2/VEs, a small threshold voltage shift (ΔVth) of 0.30 V under positive bias stress (5 V, 3600 s) and a small threshold voltage shift of -0.82 V under negative bias stress (-5 V, 3600 s). © 2013 IEEE.

关键词： Threshold voltage

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Vertical Channel-All-Around (CAA) IGZO FET with Recessed Source/Drain Structure to Improve Contact Characteristics

IEEE Electron Device Letters

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IEEE Electron Device Letters 2025年

作者： Chen, Chuanke Gu, Chen Zhao, Yue Duan, Xinlv Lu, Congyan Niu, Jiebin Zhang, Kaiping Liu, Yu Zhao, Shengjie Li, Weiwei Wu, Wanming Zhang, Chunyu Hu, Ke Wang, Shipeng Tong, Qingding Tang, Yinzhi Lu, Nianduan Geng, Di Li, Ling Institute of Microelectronics of Chinese Academy of Sciences State Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China

We proposed recessed source/drain(S/D) structure for vertical channel-all-around (CAA) IGZO FET to introduce contact interlayer and improve its contact characteristics. The IZO interlayer introduced between S/D and IGZO helps to reduce the contact resistance, and boosting the performance of CAA IGZO FET. The fabricated CAA IGZO FETs with 8 nm IZO interlayer show an average Ion @ Vth+1V of 32.6 μA/μm, SS of 86 mV/dec, and Vth of - 0.06 V. The Schottky barrier height qB is extracted to be reduced from 170 meV to 65 meV by introducing the contact interlayer, which confirms the improvement of contact characteristics. © 1980-2012 IEEE.

关键词： Schottky barrier diodes

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integrated Organic Electrochemical Transistors for Serotonin Detection and Synaptic Plasticity

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IEEE Journal of the Electron Devices Society 2025年

作者： Xie, Yifan Jin, Qingqing Cheng, Miao Tian, Yue Wang, Jinyao Chu, Jingyun Liu, Changrui Li, Mengmeng Chinese Academy of Sciences State Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing100029 China Chinese Academy of Sciences Institute of Microelectronics Beijing100029 China University of Chinese Academy of Sciences School of Integrated Circuits Beijing100049 China

Organic electrochemical transistors (OECTs) have gained increasing attention for their potential in neuromorphic electronics and neurotransmitter sensing, thanks to their inherent low-power operation and high sensitivity. This study introduces an integrated on-chip Ag/AgCl gate architecture for OECTs, which not only exhibits identical performance with devices using traditional external gates but also enables the integration of a uniform 3W3 transistor array. The resulting array demonstrates consistent performance across individual devices, characterized by uniform transconductance, on/off ratios, threshold voltages, and charge-carrier mobility. Notably, these OECTs function as highly sensitive biosensors for serotonin detection, achieving a detection limit of 0.5 nM. Furthermore, exposure to serotonin triggers a transition from short-term to long-term plasticity in the OECTs, mirroring the processes underlying synaptic memory formation. These findings open new avenues for the development of large-area bioelectronics and neuromorphic computing systems. © 2013 IEEE.

关键词： Integration

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