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作者机构:Tohoku Univ Elect Commun Res Inst Sendai Miyagi 9807577 Japan Tohoku Univ Ctr Spintron Integrated Syst Sendai Miyagi 9808577 Japan Tohoku Univ Ctr Innovat Integrated Elect Syst Sendai Miyagi 9800845 Japan Tohoku Univ Grad Sch Engn Sendai Miyagi 9808579 Japan Tohoku Univ Frontier Res Inst Interdisciplinary Sci Sendai Miyagi 9808578 Japan
出 版 物:《PROCEEDINGS OF THE IEEE》 (电气与电子工程师学会会报)
年 卷 期:2016年第104卷第10期
页 面:1844-1863页
核心收录:
基 金:Impulsing Paradigm Change through Disruptive Technologies Program of the Council for Science, Technology and Innovation RAMP D Project for Information and Communication Technology of the Ministry of Education, Culture, Sports, Science and Technology Center for Innovative Integrated Electronic Systems by Ministry of Economy, Trade and Industry Accelerated Innovative Research Initiative under the Japan Science and Technology Agency, Japan Grants-in-Aid for Scientific Research [26700003, 16K12494, 16H06300] Funding Source: KAKEN
主 题:Field-programmable gate array image recognition logic-in-memory architecture magneto-resistive RAM microcontroller unit (MCU) MTJ device MTJ/MOS-hybrid circuit nonvolatile LSI power gating standby power ternary content-addressable memory
摘 要:Nonvolatile spintronic devices have potential advantages, such as fast read/write and high endurance together with back-end-of-the-line compatibility, which offers the possibility of constructing not only stand-alone RAMs and embedded RAMs that can be used in conventional VLSI circuits and systems but also standby-power-free high-performance nonvolatile CMOS logic employing logic-in-memory architecture. The advantages of employing spintronic devices, especially magnetic tunnel junction (MTJ) devices with CMOS circuits, are discussed, and the current status of the MTJ-based VLSI computing paradigm is presented along with its prospects and remaining challenges.