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A Compact Model and parameter extraction method for a Staggered OFET With Power-Law Contact Resistance and Mobility

IEEE TRANSACTIONS ON ELECTRON DEVICES 2019年第11期66卷 4894-4900页

作者： Jung, Sungyeop Jin, Jong Woo Mosser, Vincent Bonnassieux, Yvan Horowitz, Gilles Univ Paris Saclay Lab Phys Interfaces & Couches Minces Ecole Polytech CNRSUMR 7647 F-91128 Palaiseau France POSTECH Pohang Si 37673 South Korea Silicon Display Co Ltd Yongin 17084 South Korea Itron France Issy Technol Ctr F-92448 Issy Les Moulineaux France

We present a drain current model and a consistent parameter extraction method for organic field-effect transistors (OFETs) considering the gate voltage-dependent contact resistance and mobility by power-law. The physical origin of the asymptotic power-law dependence of contact resistance is elaborated based on the current crowding model. The parameters of a new model can be completely extracted without ambiguity by the proposed extraction method based on the linear fitting. Pentacene-based OFETs with the Au source/drain contact in a staggered configuration experimentally validate the proposed model and the extraction method, which further reveal the bulk resistivity as the major contribution to contact resistance.

关键词： OFETs Logic gates Biological system modeling parameter extraction Contact resistance Conductivity Contact resistance organic field-effect transistors (OFETs) parameter extraction method

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parameter extraction of Two Diode Photovoltaic Model Using An Analytical Approach

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IEEE LATIN AMERICA TRANSACTIONS 2024年第5期22卷 400-409页

作者： Syed, Abdul Mujeer Matam, Sailaja Kumari Yammani, Chandrasekhar Sathigari, Sreekantha Reddy Natl Inst Technol Warangal Warangal Telangana India

In this study, a Two-Diode Model (TDM) is implemented for Photovoltaic (PV) modules to accurately derive PV parameters. A noteworthy contribution of this work is the introduction of a simplified current equation, necessitating the estimation of only seven parameters. Additionally, we present an effective modeling approach for the PV module based on the TDM. The extraction of TDM parameters is accomplished using the suggested analytical method. Case studies are conducted on the PWP-201 module and the R.T.C. France Solar Cell module to showcase the accuracy of the analytical method. Results from an experimental setup comprising two 40 W Poly-crystalline PV panels are also reported. The performance of the proposed analytical method for the TDM is assessed, and its consistency with experimental I-V curves and other methods is established.

关键词： Analytical method parameter extraction method Photovoltaic Single Diode Model and Two Diode Model

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The Distributed Heat Source Modeling method for the Finite Element Simulation of IGBTs

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IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY 2021年第1期11卷 83-89页

作者： Chen, Jie Deng, Erping Zhao, Zixuan Huang, Yongzhang North China Elect Power Univ State Key Lab Alternate Elect Power Syst Renewabl Beijing 102206 Peoples R China Tech Univ Chemnitz Chair Power Elect & EMC D-09126 Chemnitz Germany

The determination of the heat source has a great influence on the results of the thermal simulation in the insulated gate bipolar transistor (IGBT) module. Different from the widely used uniform heat source model, a distributed heat source model consisting of a body heat source and two boundary heat sources is proposed in this article, which is based on the ON-state model of the IGBT module. Meanwhile, a novel parameter extraction method is developed only by using I-V characteristics. And the accuracy of the extraction method is verified by comparing the calculated package resistance with the measured package resistance. Finally, the proposed distributed heat source and the traditional uniform heat source under different situations are compared in thermal simulation. The results show that the proposed model can improve the accuracy of thermal simulation results, especially the transient results in a short time, and the model parameters can be easily extracted by the I-V characteristics from the product datasheet, which will help the model be more easily applied in practical applications.

关键词： Distributed heat source I-V characteristics insulated gate bipolar transistors (IGBT) parameter extraction method thermal simulation model

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Physics-based compact model for the EMCON p-i-n diode using MATLAB and Simulink

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IET POWER ELECTRONICS 2016年第12期9卷 2416-2424页

作者： Xue, Peng Fu, Guicui Zhang, Dong Beihang Univ Sch Reliabil & Syst Engn Beijing Peoples R China

In this study, a physics-based model for emitter controlled (EMCON) p-i-n diode is proposed. The model is based on the one-dimensional Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink. The ADE is solved for all injection levels based on the design concepts of EMCON diode. The deep field stop layer utilised in the EMCON diode is also considered in the solution. Moreover, the depletion behaviour in the N-base during reverse recovery is redescribed. To be self-contained, a parameter extraction method is proposed to extract all the parameters of the model. In the end, the static and reverse recovery experiments for a commercial EMCON diode are used to validate the proposed model. The simulation results are compared with experiment waveforms and good agreement is obtained.

关键词： p-i-n diodes semiconductor device models mathematics computing electronic engineering computing Fourier analysis parameter extraction method reverse recovery N-base depletion behaviour deep field stop layer ADE ambipolar diffusion equation one-dimensional Fourier-based solution emitter controlled p-i-n diode Simulink Matlab EMCON p-i-n diode physics-based compact model

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Accurate Material parameter extraction from Broadband Terahertz Spectroscopy 40

Accurate Material Parameter Extraction from Broadband Terahe...

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40th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

作者： Greenall, N. R. Wood, C. D. Russell, C. Li, L. H. Linfield, E. H. Davies, A. G. Cunningham, J. E. Burnett, A. D. Univ Leeds Sch Elect & Elect Engn Leeds LS2 9JT W Yorkshire England Univ Leeds Sch Chem Leeds LS2 9JT W Yorkshire England

ISBN: (纸本)9781479982721

We demonstrate how a transfer function model based parameter extraction method, combined with total variance analysis, allows the extraction of both the complex refractive index and the thickness of a sample over a bandwidth of >6 THz from THz time-domain spectroscopy measurements. We discuss how the techniques developed have been applied to absorbent powders measured at variable low temperatures.

关键词： parameter estimation refractive index measurement terahertz spectroscopy transfer function matrices broadband terahertz spectroscopy complex refractive index parameter extraction method terahertz time-domain spectroscopy total variance analysis transfer function model Bandwidth Refractive index Silicon Spectroscopy Temperature measurement Thickness measurement Time-domain analysis

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parameter-extraction method for MQW VCSEL rate-equation model for system simulation purposes

Parameter-extraction method for MQW VCSEL rate-equation mode...

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Pacific Rim Conference on Lasers and Electro-Optics

作者： Lysak, V. V. Chang, K. S. Song, Y. M. Lee, Y. T. Gwangju Inst Sci & Technol Kwangju 500712 South Korea

The investigated intra-cavity-contacted oxide-confined vertical-cavity surface emitting laser (ICOC-VCSEL) has 980 nm wavelength and 10 GHz modulation bandwidth. The modulation dynamics of VCSEL with multiple quantum ... 详细信息

ISBN: (纸本)9781424411733

关键词： parameter estimation quantum well lasers surface emitting lasers MQW VCSEL carrier number coupled rate equations frequency 10 GHz model parameters modulation dynamics parameter extraction method rate equation model system simulation purposes wavelength 9 Surface emitting lasers rate equation model quantum dash lasers parameter estimation model parameters systems simulation Quantum wells rate equations parameter extraction

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Impact of microwave interference on dynamic operation and power dissipation of CMOS inverters

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IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY 2007年第2期49卷 329-338页

作者： Kim, Kyechong Iliadis, Agis A. Univ Maryland Dept Elect & Comp Engn College Pk MD 20742 USA

The effects of electromagnetic interference (EMI) from high-power microwave signals on CMOS inverters are reported. In order to study these effects more effectively, a novel analytical parameter extraction method, which allows us to predict the dynamic operation of the inverters under interference from experimentally measured load-line characteristics, is developed. Based on the method, the output voltages, output short-circuit currents, propagation delays, and dynamic power dissipation during EMI were extracted. The results showed that the inverters suffer severely from compressed output voltage swing, bit errors, significant changes in the propagation delays, and substantially increased short-circuit currents, as well as a large increase in dynamic power dissipation during logic state transition from high to low and vice versa. Scaling down of the inverters showed that such operational parameters of the devices were more strongly affected by the interference, resulting in significantly more vulnerable CMOS inverters.

关键词： CMOS inverters device scaling dynamic operation electromagnetic interference (EMI) parameter extraction method power dissipation propagation delay

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Linear cofactor difference extrema of MOSFET's drain-current and application to parameter extraction

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IEEE TRANSACTIONS ON ELECTRON DEVICES 2007年第4期54卷 874-878页

作者： He, Jin Bian, Wei Tao, Yadong Liu, Feng Song, Yan Hu, Jinhua Zhang, Xing Wu, Wen Wang, Ting Chan, Mansun Peking Univ Shenzhen Grad Sch Sch Comp & Informat Engn Shenzhen 518055 Peoples R China Peking Univ Sch Elect Engn & Comp Sci Inst Microelect Hub MPW Beijing 100871 Peoples R China Hong Kong Univ Sci & Technol Dept Elect & Comp Engn Kowloon Hong Kong Peoples R China

The linear cofactor difference extrema due to the nonlinearity of the MOSFET drain-current and their application to extract MOSFET parameters are presented in this brief. The extrema of drain-current are obtained by applying the linear cofactor difference operator to the drain-current versus gate voltage curve in the linear region. These extrema are directly used to find the threshold voltage and the mobility of a MOSFET. This method has been tested using data from experimentally fabricated MOSFETs and by simulating results through the device simulator DESSIS-ISE. The results agree well with those obtained by the standard second-derivative approach, which demonstrates the validity of the method presented. The advantages and disadvantages of this method are also discussed.

关键词： drain-current linear cofactor difference mobility degradation MOSFET parameter extraction method threshold voltage

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Equivalent circuit modelling of spiral defected ground structure for microstrip line

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ELECTRONICS LETTERS 2002年第19期38卷 1109-1110页

作者： Kim, CS Lim, JS Nam, S Kang, KY Ahn, D ETRI Telecommun Basic Res Lab Yusung Gu Taejon 305600 South Korea Seoul Natl Univ Sch Elect Engn& Comp Sci Seoul 151742 South Korea Soonchunhyang Univ Div Informat Technol Engn Asan 336745 Chungnam South Korea

An equivalent circuit for the microstrip line with a spiral defected ground structure (DGS), which is etched on the metallic ground plane, and a parameter extraction method, are presented. The proposed spiral DGS provides steep rejection characteristics with only one spiral-shaped defect. Experimental results show excellent agreement with simulated results of the equivalent circuit and the validity of equivalent circuit modelling for the spiral DGS.

关键词： metallic ground plane parameter extraction method transmission line theory equivalent circuit modelling microstrip line Passive filters and other passive networks Butterworth filters Transmission line theory spiral defected ground structure microstrip filters Waveguide and microwave transmission line components spiral-shaped defect EM simulation Waveguides and microwave transmission lines microstrip lines Butterworth-type one-pole lowpass filter steep rejection characteristics equivalent circuits low-pass filters

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Simple parameter extraction method for non-ideal Schottky barrier diodes

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ELECTRONICS LETTERS 1998年第12期34卷 1268-1269页

作者： Lee, JI Brini, J Dimitriadis, CA ENSEG LPCS F-38016 Grenoble France Univ Thessaloniki Dept Phys Thessalonika 54006 Greece

Simple. on-site parameter extraction methods are proposed;the ideality factor, series resistance, leakage resistance and saturation current are determined from the current-voltage characteristics of a Shottky barrier ... 详细信息

关键词： electric resistance saturation current Schottky diodes leakage resistance series resistance parameter extraction method nonideal Schottky barrier diodes ideality factor semiconductor device testing leakage currents current-voltage characteristics

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