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Information Storage System and technology, ISST 2017

作者： Zhang, Xumeng Wang, Wei Zhao, Xiaolong Lv, Hangbing Long, Shibing Liu, Qi Liu, Ming Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China College of Electronic Science and Engineering National University of Defense Technology Changsha410073 China Department of Physics Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application Wuhan University Wuhan430072 China

ISBN: (纸本)9781943580378

Neuron and synapse are the basic constitutional units of biological neural network which has high efficiency in information processing. On account of which, the bio-inspired neuromorphic computing has attracted considerable attention. In this letter, we demonstrate an integration and fire artificial neuron (neuristor) based on threshold switching memristor. The neuristor captures 4 crucial features for actionpotential- based computing: all-or-nothing spiking of an action potential, threshold-driven spiking, a refractory period, and the strength-modulated frequency response. A system-level simulation of the neuristor as post-synaptic neuron show that the validity to be used for a pattern recognition application. The experimental and simulation result exhibit that the neurisor can implement the basic functions of spiking neurons and has a great potential for neuromorphic computing. © 2017 OSA.

关键词： Memristors

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Data Storage: Self‐Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors (Adv. Mater. 7/2019)

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Advanced Materials 2019年第7期31卷

作者： Xiaobing Yan Yifei Pei Huawei Chen Jianhui Zhao Zhenyu Zhou Hong Wang Lei Zhang Jingjuan Wang Xiaoyan Li Cuiya Qin Gong Wang Zuoao Xiao Qianlong Zhao Kaiyang Wang Hui Li Deliang Ren Qi Liu Hao Zhou Jingsheng Chen Peng Zhou National‐Local Joint Engineering Laboratory of New Energy Photovoltaic Devices Key Laboratory of Digital Medical Engineering of Hebei Province College of Electron and Information Engineering Hebei University Baoding 071002 P. R. China Department of Materials Science and Engineering National University of Singapore Singapore 117576 Singapore State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Giantec Semiconductor Inc. Shanghai 201203 China

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Nonvolatile Memory: Performance‐Enhancing Selector via Symmetrical Multilayer Design (Adv. Funct. Mater. 13/2019)

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Advanced Functional Materials 2019年第13期29卷

作者： Yiming Sun Xiaolong Zhao Cheng Song Kun Xu Yue Xi Jun Yin Ziyu Wang Xiaofeng Zhou Xianzhe Chen Guoyi Shi Hangbing Lv Qi Liu Fei Zeng Xiaoyan Zhong Huaqiang Wu Ming Liu Feng Pan Key Laboratory of Advanced Materials (MOE) School of Materials Science and Engineering Tsinghua University Beijing 100084 P. R. China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 P. R. China National Center for Electron Microscopy in Beijing Key Laboratory of Advanced Materials (MOE) State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 P. R. China Institute of Microelectronics Tsinghua University Beijing 100084 P. R. China

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Barrier tunneling of the loop-nodal semimetal in the hyperhoneycomb lattice

arXiv

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arXiv 2018年

作者： Guan, Ji-Huan Zhang, Yan-Yang Lu, Wei-Er Xia, Yang Li, Shu-Shen SKLSM Institute of Semiconductors Chinese Academy of Sciences P.O. Box 912 Beijing100083 China School of Physical Sciences University of Chinese Academy of Sciences Beijing101408 China Synergetic Innovation Center of Quantum Information and Quantum Physics University of Science and Technology of China Hefei Anhui230026 China School of Microelectronics University of Chinese Academy of Sciences Beijing101408 China Microelectronic Instrument and Equipment Research Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing101408 China

We theoretically investigate the barrier tunneling in the three-dimensional model of the hyperhoneycomb lattice, which is a nodal-line semimetal with a Dirac loop at zero energy. In the presence of a rectangular potential, the scattering amplitudes for different injecting states around the nodal loop are calculated, by using analytical treatments of the effective model, as well as numerical simulations of the tight binding model. In the low energy regime, states with remarkable transmissions are only concentrated in a small range around the loop plane. When the momentum of the injecting electron is coplanar with the nodal loop, nearly perfect transmissions can occur for a large range of injecting azimuthal angles if the potential is not high. For higher potential energies, the transmission shows a resonant oscillation with the potential, but still with peaks being perfect transmissions that do not decay with the potential width. These robust transports of the loop-nodal semimetal can be approximately explained by a momentum dependent Dirac Hamiltonian. Copyright © 2018, The Authors. All rights reserved.

关键词： Potential energy

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Effect of annealing on the characteristics of Ti/Al Ohmic contacts to p-type 4H-SiC 11th

Effect of annealing on the characteristics of Ti/Al Ohmic co...

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11th European Conference on silicon Carbide and Related Materials, ECSCRM 2016

作者： Tang, Yi-Dan Shen, Hua-Jun Zhang, Xu-Fang Guo, Fei Bai, Yun Peng, Zhao-Yang Liu, Xin-Yu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China School of Physical Science and Technology Lanzhou University Lanzhou China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of china Chengdu China

ISBN: (纸本)9783035710434

Ti/Al contacts deposited on p-type epilayer doped with Al at 2×1019 cm-3 are reported. The current-voltage curves of Ti/Al contacts annealed at different temperatures from 800 to 1000 °C were measured, which provided the specific contact resistances (SCRs) of 6.59×10-5 Ω/cm2 and 7.81×10-5Ω/cm2 after annealing at 900°C for 5min and 950°C for 2min, respectively. The microstructures of Ti/Al contact on P-type 4H–SiC were investigated by X-ray diffraction (XRD). The results of XRD show that the phases of Ti3SiC2 was formed at the metal/SiC interface after annealing, which could be effective to ohmic contacts on P-type 4H–SiC. The quantitative phase analysis were also discussed, which show that the phase composition of Ti3SiC2 is key factor for low resistance to P-type 4H–SiC. Moreover, simulations proved that the gradual Ti3SiC2 ISL reduces or eliminates the effective barrier height at the metal/Ti3SiC2/p-type and may also contribute to low contact resistivity. © 2017 Trans Tech Publications, Switzerland.

关键词： X ray diffraction

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Study of RBSOA Reliability of Nanoscale Partially Narrow Mesa IGBT(PNM-IGBT) 13

Study of RBSOA Reliability of Nanoscale Partially Narrow Mes...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： Jiang Lu Hainan Liu Jiajun Luo Lixin Wang Guohuan Zhang Zhengsheng Han Institute of Microelectronics Chinese Academy of Science Key Laboratory of Silicon Device Technology Chinese Academy of Sciences

ISBN: (纸本)9781467397209

In this paper, the RBSOA characteristic of nanoscal Partially Narrow Mesa IGBT(PNM-IGBT) is studied by numerical simulation. Result shows that the maximum turn-off critical current of nanoscale PNM-IGBT increases about 12.3% compared with the conventiona trench IGBT. The main reason is that the electric field distribution of PNM-IGBT at turn-off state is more fla and uniform than the conventional trench IGBT. Thus local carrier concentration is attenuated and th happening chance of the dynamic avalanche effect is les Furthermore, the location of the peak electric field i shifted to the center of mesa area and the hole below th Nplus area is reduced correspondingly. Therefore, th turn-off ruggedness of this PNM-IGBT becomes much better compared with the conventional trench IGBT.

关键词： Study of RBSOA Reliability of Nanoscale Partially Narrow Mesa IGBT simulation PNM-IGBT

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Author Correction: Universal mechanical exfoliation of large-area 2D crystals

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Nature communications 2020年第1期11卷 2938页

作者： Yuan Huang Yu-Hao Pan Rong Yang Li-Hong Bao Lei Meng Hai-Lan Luo Yong-Qing Cai Guo-Dong Liu Wen-Juan Zhao Zhang Zhou Liang-Mei Wu Zhi-Li Zhu Ming Huang Li-Wei Liu Lei Liu Peng Cheng Ke-Hui Wu Shi-Bing Tian Chang-Zhi Gu You-Guo Shi Yan-Feng Guo Zhi Gang Cheng Jiang-Ping Hu Lin Zhao Guan-Hua Yang Eli Sutter Peter Sutter Ye-Liang Wang Wei Ji Xing-Jiang Zhou Hong-Jun Gao Institute of Physics Chinese Academy of Sciences 100190 Beijing China. Songshan Lake Materials Laboratory 523808 Dongguan China. Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices Renmin University of China 100872 Beijing China. School of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea. School of Information and Electronics MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices Beijing Institute of Technology 100081 Beijing China. College of Engineering Peking University 100871 Beijing China. School of Physical Science and Technology Shanghai Tech University 201210 Shanghai China. University of Chinese Academy of Sciences 100049 Beijing China. Institute of Microelectronics of Chinese Academy of Sciences 100029 Beijing China. Department of Mechanical and Materials Engineering University of Nebraska-Lincoln Lincoln NE 68588 United States. Department of Electrical and Computer Engineering University of Nebraska-Lincoln Lincoln NE 68588 United States. psutter@unl.edu. Songshan Lake Materials Laboratory 523808 Dongguan China. wji@***. Institute of Physics Chinese Academy of Sciences 100190 Beijing China. xjzhou@***. Songshan Lake Materials Laboratory 523808 Dongguan China. xjzhou@***. University of Chinese Academy of Sciences 100049 Beijing China. xjzhou@***. Institute of Physics Chinese Academy of Sciences 100190 Beijing China. hjgao@***. University of Chinese Academy of Sciences 100049 Beijing China. hjgao@***.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

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Investigation of current collapse mechanism of LPCVD Si3N4 passivated AlGaN/GaN HEMTs by fast soft-switched current-DLTS and CC-DLTFS

Investigation of current collapse mechanism of LPCVD Si3N4 p...

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International Symposium on Power Semiconductor devices and Ics (ISPSD)

作者： Xinhua Wang Xuanwu Kang Jinhan Zhang Ke Wei Sen Huang Xinyu Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China

In this work, we investigated the current collapse mechanism of AlGaN/GaN high-electron mobility transistors (HEMTs) with LPCVD Si 3 N 4 passivation. With newly developed fast soft-switched current-DLTS techniques, we achieved current acquisition within 100 ns after each stress pulse and with high sampling rate up to 5 MSa/s. A single trap level (~66 meV) and capture cross section On (-1.05×10 -20 cm -2 ) has been found within the AlGaN/GaN HEMTs surface. Moreover, this trap level is confirmed by low-temperature Constant-Capacitance Deep-Level Transient Fourier Spectroscopy (CC-DLTFS) measurement on GaN MIS-diode structure. Although this trap level is quite shallow, it can still lead to current collapse in LPCVD-SiNx-passivated AlGaN/GaN HEMTs due to the small On.

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Highly improved resistive switching performances of the self-doped Pt/HfO_2:Cu/Cu devices by atomic layer deposition

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science China(Physics,Mechanics & Astronomy) 2016年第12期59卷 72-77页

作者： Sen Liu Wei Wang QingJiang Li XiaoLong Zhao Nan Li Hui Xu Qi Liu Ming Liu College of Electronic Science and Engineering National University of Defense Technology Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Department of Physics Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application Wuhan University

Metal-oxide electrochemical metallization (ECM) memory is a promising candidate for the next generation nonvolatile *** this memory suffers from large dispersion of resistive switching parameters due to the intrinsic randomness of the conductive filament. In this work, we have proposed a self-doping approach to improve the resistive switching characteristics. The fabricated Pt/HfO_2:Cu/Cu device shows outstanding nonvolatile memory properties, including high uniformity, good endurance, long retention and fast switching speed. The results demonstrate that the self-doping approach is an effective method to improve the metal-oxide ECM memory performances and the self-doped Pt/HfO_2:Cu/Cu device has high potentiality for the nonvolatile memory applications in the future.

关键词： resistive switching nonvolatile memory ECM Cu dopant

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The Current Observer Design for Buck Converter 13

The Current Observer Design for Buck Converter

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： Dian Wang Yu-Hong Zhao Bo Li Bin-Hong Li Jia-Jun Luo North China University of Technology Institute of Microelectronics of the Chinese Academy of Sciences Key Laboratory of Silicon Device and Technology Chinese Academy of Science

ISBN: (纸本)9781467397209

A unified formulation for the design of a current observer for the basic topologies of buck converter is presented. The formulation is common for the standard buck converter and the observer is robust to load variation. The observer has been tested in a sliding mode control(SMC)control structure for buck converter and the simulation results show a good performance of the approach.

关键词： Buck Converter Current Observer Sliding Mode Control

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