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Highly improved resistive switching performances of the self-doped Pt/HfO_2:Cu/Cu devices by atomic layer deposition

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Science China(Physics,Mechanics & Astronomy) 2016年第12期59卷 72-77页

作者： Sen Liu Wei Wang QingJiang Li XiaoLong Zhao Nan Li Hui Xu Qi Liu Ming Liu College of Electronic Science and Engineering National University of Defense Technology Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Department of Physics Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application Wuhan University

Metal-oxide electrochemical metallization (ECM) memory is a promising candidate for the next generation nonvolatile *** this memory suffers from large dispersion of resistive switching parameters due to the intrinsic randomness of the conductive filament. In this work, we have proposed a self-doping approach to improve the resistive switching characteristics. The fabricated Pt/HfO_2:Cu/Cu device shows outstanding nonvolatile memory properties, including high uniformity, good endurance, long retention and fast switching speed. The results demonstrate that the self-doping approach is an effective method to improve the metal-oxide ECM memory performances and the self-doped Pt/HfO_2:Cu/Cu device has high potentiality for the nonvolatile memory applications in the future.

关键词： resistive switching nonvolatile memory ECM Cu dopant

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Analytical current model of tunneling field-effect transistor considering the impacts of both gate and drain voltages on tunneling

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Science China(Information Sciences) 2015年第2期58卷 174-181页

作者： WANG Chao WU ChunLei WANG JiaXin HUANG QianQian HUANG Ru Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University

In this paper, a closed-form current model for bulk tunneling field-effect transistor(TFET) is put forward. Based on the operation mechanism, the channel surface potential φsf which involves the impact of both the gate and the drain voltages is established for the first time. In addition, a new calculation method for the dynamic tunneling width, which is the critical parameter for the TFET modeling, is derived from the surface potential. The surface-potential-based current model is established which is in a good agreement with TCAD simulation results.

关键词： tunneling field-effect transistor current model surface potential drain voltage tunneling width

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Synthesis of Highly Uniform Monolayer Graphene by Etching the Multilayer Spots for Electronic devices 13

Synthesis of Highly Uniform Monolayer Graphene by Etching th...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Pei Peng Zidong Wang Zhongzheng Tian Yuehui Jia Xin Gong Jianhong Song Liming Ren Yunyi Fu Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Materials Physics Laboratory State Key Laboratory for Mesoscopic Physics School of Physics Peking University School of Electronic and Computer Engineering Peking University Shenzhen Graduate School

ISBN: (纸本)9781467397209

We demonstrate a facile method to grow highly uniform monolayer graphene films on copper foils by atmospheric pressure chemical vapor deposition（APCVD）. The technique in this method includes lowering flow ratio of methane/hydrogen and extending exposure time to hydrogen. All the multilayer islands will be etched away by hydrogen during this growth process, resulting in obtaining highly uniform monolayer graphene. A mechanism for the suppression of mutilayer spots based on the etching effect of hydrogen is *** electron and hole room-temperature mobilities for the back-gated graphene transistors are up to about 3800cmVs and 3300 cmVs, respectively.

关键词： Synthesis of Highly Uniform Monolayer Graphene by Etching the Multilayer Spots for Electronic devices Graphene

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Ge surface passivation by GeO2 fabricated by N2O plasma oxidation

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Science China(Information Sciences) 2015年第4期58卷 143-147页

作者： LIN Meng AN Xia LI Ming YUN QuanXin LI Min LI Zhi Qiang LIU PengQiang ZHANG Xing HUANG Ru Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

In this paper, Ge surface passivation by Ge O2 grown by N2 O plasma oxidation is presented and experimentally demonstrated. Results show that stoichiometrically Ge O2 can be achieved by N2 O plasma oxidation at 350°C. The transmission electron microscope observation reveals that the Ge O2/Ge interface is automatically smooth and the thickness of Ge O2is～0.9 nm with 120 s N2 O plasma oxidation. The interface state density of Ge surface after N2 O plasma passivation is about～3×1011 cm-2e V-1. With Ge O2 passivation,the hysteresis of MOS capacitor with Al2O3 as gate dielectric is reduced to～55 m V, compared to 130 m V of the untreated one. The Fermi-level at Ge O2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage, which is promising for high performance NMOSFETs fabrication.

关键词： Ge passivation Ge O 2 N 2 O plasma oxidation

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Enhancement of Photocurrent in Suspended Monolayer Graphene 13

Enhancement of Photocurrent in Suspended Monolayer Graphene

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Jianhong Song Xin Gong Pei Peng Zidong Wang Zhongzheng Tian Yuehui Jia Liming Ren Yunyi Fu Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Materials Physics Laboratory State Key Laboratory for Mesoscopic Physics School of Physics Peking University School of Electronic and Computer Engineering Peking University Shenzhen Graduate School

ISBN: (纸本)9781467397209

The photocurrent in graphene has drawn much attention in recent years. The mechanisms of its production vary in different situations, such as at the interfaces of monolayer-bilayer junction or p-n junction. Here we demonstrate photocurrent generation in graphene-based field-effect transistors(GFETs) with a partially suspended area. Both Raman and photocurrent mapping were performed after a laser-induced doping under vacuum at room temperature. The resulting photocurrent in the suspended area is an order of magnitude larger than that in the supported area. The difference in photocurrent may be attributed to the thermoelectric effect.

关键词： Raman Enhancement of Photocurrent in Suspended Monolayer Graphene

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GIDL Challenge of GAA SNWT For Low Power Application

GIDL Challenge of GAA SNWT For Low Power Application

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Ming Li Jiewen Fan Yuancheng Yang Gong Chen Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

In this paper, the challenge of gate-all-around nanowire transistor for low power application is uncovered and discussed from experimental and TCAD simulation. For promising low power application, gate-all-around nanowire transistor faces more difficulties than expected due to abnormal gate-induced-drain-leakage current behavior. The study shows that as nanowire diameter shrinks, GIDL current will become worse rather than suppressed. The gate coupling modulated drain-to-body electric field is found responsible for the increased GIDL current in the extremely scaled nanowire. To overcome the challenge of GAA SNWT in low power application, a practical design is proposed by optimization of overlap length and drain junction gradient considering the trade-off between short channel effect and performance.

关键词： GIDL Challenge of GAA SNWT For Low Power Application

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Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices

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Journal of Semiconductors 2015年第11期36卷 39-43页

作者：武唯康安霞谭斐冯慧陈叶华刘静静张兴黄如 Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University

The effects of the physical damages induced by heavy ion irradiation on the performance of partiallydepleted SOI devices are experimentally investigated. After heavy ion exposure, different degradation phenomena are observed due to the random strike of heavy ions. A decrease of the saturation current and transconductance,and an enhanced gate-induced drain leakage current are observed, which are mainly attributed to the displacement damages that may be located in the channel, the depletion region of the drain/body junction or the gate-to-drain overlap region. Further, PDSOI devices with and without body contact are compared, which reveals the differences in the threshold voltage shift, the drain-induced barrier lowing effect, the transconductance and the kink effect. The results may provide a guideline for radiation hardened design.

关键词： heavy ion displacement damages PDSOI performance degradation

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Line-edge roughness induced single event transient variation in SOI Fin FETs

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Journal of Semiconductors 2015年第11期36卷 25-29页

作者：武唯康安霞蒋晓波陈叶华刘静静张兴黄如 Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University

The impact of process induced variation on the response of SOI Fin FET to heavy ion irradiation is studied through 3-D TCAD simulation for the first time. When Fin FET biased at OFF state configuration（Vgs D0, Vds DVdd/ is struck by a heavy ion, the drain collects ionizing charges under the electric field and a current pulse（single event transient, SET） is consequently formed. The results reveal that with the presence of line-edge roughness（LER）, which is one of the major variation sources in nano-scale Fin FETs, the device-to-device variation in terms of SET is observed. In this study, three types of LER are considered： type A has symmetric fin edges, type B has irrelevant fin edges and type C has parallel fin edges. The results show that type A devices have the largest SET variation while type C devices have the smallest variation. Further, the impact of the two main LER parameters,correlation length and root mean square amplitude, on SET variation is discussed as well. The results indicate that variation may be a concern in radiation effects with the down scaling of feature size.

关键词： heavy ion irradiation single event transient variation line-edge roughness SOI Fin FET

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A novel insight into transient behaviors of diode-triggered SCRs under VF-TLP testing by 2D/3D simulations

A novel insight into transient behaviors of diode-triggered ...

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IEEE International Nanoelectronics Conference (INEC)

作者： Lizhong Zhang Yuan Wang Yandong He Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of Microelectronics Peking University Beijing

Transient behaviors of the diode-triggered silicon controlled rectifiers (DTSCRs) under very-fast transmission line pulse (VF-TLP) testing are investigated in this paper. The underlying physics needs to be comprehensively investigated and 2D/3D device simulations are well performed and compared. Analysis uncovers that the turn-on process of intrinsic SCR is ascribed to Darlington effect as well as junction breakdown.

关键词： Thyristors Junctions Electrostatic discharges Testing Anodes Performance evaluation

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Enhanced recrystallization of ultra-thin α-silicon film by 2-D confined lattice regrowth

Enhanced recrystallization of ultra-thin α-silicon film by ...

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IEEE International Nanoelectronics Conference (INEC)

作者： Hao Zhang Ming Li Gong Chen Yuancheng Yang Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

In this paper, the improved recrystallization of ultra-thin amorphous silicon (α-Si) film was realized by two-dimensionally confined lattice regrowth with normal rapid thermal annealing process. By experimental investigation, the α-Si films with thickness of 400 Å were found to be recrystallized even at 850°C for only 35s rapid thermal annealing (RTA). With capped Si 3 N 4 layer, the lattice regrowth was confined more strictly to along the film plane so that smoother and higher-quality polycrystalline silicon film was obtained which is suitable for future monolithic three dimensional (3D) stacked integration processes.

关键词： Films Annealing Lattices Rough surfaces Surface roughness Three-dimensional displays Grain size

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