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Direct patterning of nanometer-scale silicide structures by focused ion-beam implantation through a thin barrier layer

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Journal of Vacuum science and Technology B: Microelectronics and Nanometer Structures 2001年第6期19卷 2525-2528页

作者： Mitan, M.M. Pivin, D.P. Alford, T.L. Mayer, J.W. Department of Chemical and Materials Engineering Center for Solid State Electronics Research Arizona State University Tempe AZ 85287-6006 United States

Direct focused ion beam (FIB) is presented as a method for patterning of CoSi2 silicide structures on a silicon surface. This technique allows the fabrication of submicron structures without the use of resist-based Li... 详细信息

关键词： Ion implantation

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Phase Breaking as a Probe of the Intrinsic Level Spectrum of Open Quantum Dots

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physica status solidi (b) 2001年第1期204卷

作者： J. P. Bird H. Linke J. Cooper A. P. Micolich D. K. Ferry R. Akis Y. Ochiai R. P. Taylor R. Newburry P. Omling Y. Aoyagi T. Sugano Center for Solid State Electronics Research Arizona State University Tempe AZ 85287-6206 USA Department of Solid State Physics Lund University Box 118 S-22100 Lund Sweden Nanoelectronic Materials Laboratory Frontier Research Program RIKEN 2-1 Hirosawa Wako Saitama 351-01 Japan School of Physics University of New South Wales Sydney 2052 Australia Department of Materials Science Chiba University 1-33 Yayoi-cho Inage-ku Chiba 263 Japan

We measure the dependence of the phase breaking time on temperature and on dc voltage in ballistic split-gate quantum dots, the lead openings of which are defined by means of quantum point contacts. Estimates for the phase breaking time are obtained by studying the high-field evolution of the reproducible fluctuations, observed in the low-temperature magneto-conductance of the devices, and from the quenching of quantum interference induced by the dc bias. Varying either temperature or dc bias, a saturation of the phase breaking time is observed for sufficiently low values of these parameters. The energy scale at which the saturation onsets is found to be comparable to the average spacing of discrete levels within the quantum dot, indicative of a crossover to zero-dimensional phase breaking. Based on these observations, we suggest that studies of electron phase coherence may provide a powerful probe of the intrinsic eigenspectra of open quantum dots.

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Phase breaking and energy relaxation in open quantum-dot arrays

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Physical Review B 2000年第23期62卷 15356-15356页

作者： C. Prasad D. K. Ferry A. Shailos M. Elhassan J. P. Bird L.-H. Lin N. Aoki Y. Ochiai K. Ishibashi Y. Aoyagi Department of Electrical Engineering and Center for Solid State Electronics Research Arizona State University Tempe Arizona 85287-5706 Department of Materials Science Chiba University 1-33 Yayoi Inage Chiba 236-8522 Japan Semiconductor Laboratory RIKEN 2-1 Hirosawa Wako Saitama 351-0198 Japan

We study both the phase-breaking and the energy-relaxation times as a function of both temperature and bias current in arrays of coupled, open quantum dots. These times show a saturation at low temperature, and a decay at higher temperatures. Importantly, the variations of sample resistance as a function of temperature and current cannot be used to infer the electron temperature at a given bias current, which suggests that the energy relaxation process is likely to be phonon based.

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Lead-Orientation-Dependent Wave Function Scarring in Open Quantum Dots

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Physical Review Letters 1999年第23期82卷 4691-4691页

作者： J. P. Bird R. Akis D. K. Ferry D. Vasileska J. Cooper Y. Aoyagi T. Sugano Center for Solid State Electronics Research & Department of Electrical Engineering Arizona State University Tempe Arizona 85287-5706 Nanoelectronic Materials Laboratory Frontier Research Program RIKEN 2-1 Hirosawa Wako-shi Saitama 351-01 Japan

Experimental studies of the conductance of open quantum dots show a series of highly regular oscillations at low temperatures as the voltage applied to their defining gates is varied. Simulations of quantum transport through these dots reveal the oscillations to be correlated to the recurrence of specific groups of wave function scars. We furthermore find that nominally identical dots, differing only in the orientation of their input and output contacts, may be used to excite different families of scars, giving rise in turn to measurable transport results.

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Insulating state in open quantum dots and quantum dot arrays

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Annalen der Physik 1999年第1期9卷

作者： F. Ge C. Prasad A. Andresen J.P. Bird D.K. Ferry L.-H. Lin N. Aoki K. Nakao Y. Ochiai K. Ishibashi Y. Aoyagi T. Sugano Center for Solid State Electronics Research & Department of Electrical Engineering Arizona State University Tempe AZ 85287-5706 USA Department of Materials Technology Chiba University 1-33 Yayoi-cho Inage-ku Chiba 236-8522 Japan Nanoelectronic Materials Laboratory Frontier Research Program RIKEN 2-1 Hirosawa Wako-shi Saitama 351-0198 Japan

We describe the observation of novel localization in mesoscopic quantum dots and quantum dot arrays, which are realized in high mobility GaAs/AlGaAs heterojunctions using the split-gate technique. With a sufficient gate voltage applied to form the devices, their resistance diverges as the temperature is lowered below a degree Kelvin, behavior which we attribute to localization. Evidence for the localization is found over the entire range of gate voltage for which the dots are defined, persisting to conductances higher than 50 e 2 / h .

关键词： Localization Quantum dots Scaling

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Contributory presentations/posters

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Journal of Biosciences 1999年第1期24卷 33-198页

作者： N. Manoj V. R. Srinivas A. Surolia M. Vijayan K. Suguna R. Ravishankar R. Schwarzenbacher K. Zeth Diederichs G. M. Kostner A. Gries P. Laggner R. Prassl Madhusudan Pearl Akamine Nguyen-huu Xuong Susan S. Taylor M. Bidva Sagar K. Saikrishnan S. Roy K. Purnapatre P. Handa U. Varshney B. K. Biswal N. Sukumar J. K. Mohana Rao A. Johnson Vasantha Pattabhi S. Sri Krishna Mira Sastri H. S. Savithri M. R. N. Murthy Bindu Pillai Kannan M. V. Hosur Mukesh Kumar Swati Patwardhan K. K. Kannan B. Padmanabhaa S. Sasaki-Sugio M. Nukaga T. Matsuzaki S. Karthikevan S. Sharma A. K. Sharma M. Paramasivam P. Kumar J. A. Khan S. Yadav A. Srinivasan T. P. Singh S. Gourinath Neelima Alam A. Srintvasan Vikas Chandra Punit Kaur Ch. Betzel S. Ghosh A. K. Bera S. Bhattacharya S. Chakraborty A. K. Pal B. P. Mukhopadhyay I. Dey U. Haldar Asok Baneriee Jozef Sevcik Adriana Solovicova K. Sekar M. Sundaralingam N. Genov Dong-cai Liang Tao Jiang Ji-ping Zhang Wen-rui Chang Wolfgang Jahnke Marcel Blommers S. C. Panchal R. V. Hosur Bindu Pillay Puniti Mathur S. Srivatsun Ratan Mani Joshi N. R. Jaganathan V. S. Chauhan H. S. Atreya S. C. Sahu K. V. R. Chary Girjesh Govil Elisabeth Adjadj Éric Quinjou Nadia Izadi-Pruneyre Yves Blouquit Joël Mispelter Bernadette Heyd Guilhem Lerat Philippe Milnard Michel Desmadreil Y. Lin B. D. Nageswara Rao Vidva Raghunathan Mei H. Chau Prashant Pesais Sudha Srivastava Evans Coutinho Anil Saran Leizl F. Sapico Jayson Gesme Herbert Lijima Raymond Paxton Thamarapu Srikrishnan C. R. Grace G. Nagenagowda A. M. Lynn Sudha M. Cowsik Sarata C. Sahu S. Chauhan A. Bhattacharya G. Govil Anil Kumar Maurizio Pellecchia Erik R. P. Zuiderweg Keiichi Kawano Tomoyasu Aizawa Naoki Fujitani Yoichi Hayakawa Atsushi Ohnishi Tadayasu Ohkubo Yasuhiro Kumaki Kunio Hikichi Katsutoshi Nitta V. Rani Parvathy R. M. Kini Takumi Koshiba Yoshihiro Kobashigawa Min Yao Makoto Demura Astushi Nakagawa Isao Tanaka Kunihiro Kuwajima Jens Linge Seán O. Donoghue Michael Nilges G. Chakshusmathi Girish S. Ratnaparkhi P. K. Madhu R. Varadarajan C. Tetreau Molecular Biophysics Unit Indian Institute of Science Bangalore India Austrian Academy of Sciences Institute of Biophysics and X-ray Structure Research Graz Austria Faculty of Biology University of Konstanz Germany Institute of Medical Biochemistry University of Graz Austria Howard Huges Medical Institute Department of Chemistry & Biochemistry University of California La Jolla USA Department of Chemistry & Biochemistry University of California San Diego La Jolla USA Molecular Biophysics Unit India Department of Microbiology &Cell Biology Indian Institute of Science Bangalore India Macromolecular Structure Laboratory NCI - Frederick Cancer Research and Development Center ABL - Basic Research Program Frederick USA Department of Crystallography and Biophysics University of Madras Chennai Biochemistry Department Indian Institute of Science Bangalore India Condensed Matter Physics Division B.A.R.C. Trombay Mumbai Condensed Matter Physics Division Bhabha Atomic Research Centre Trombay Mumbai IMCB The University of Tokyo Tokyo Japan Mitsubishi Chemical Corporation Yokohama Research Center Yokohama Japan Faculty of Pharmaceutical Sciences Chiba University Chiba Japan Department of Biophysics All India Institute of Medical Sciences New Delhi India Department of Biophysics All India Institute of Medical sciences New Delhi India Institüt Physiologische Chemie Hamburg Germany Biophysics Department Bose Institute Calcutta India Slovak Academy of Sciences Institute of Molecular Biology Bratislava Slovakia Indian Institute of Science Bioinformatics Centre Bangalore Departments of Chemistry and Biochemistry Biological Macromolecular Structure Center USA Bulgarian Academy of Sciences Institute of Organic Chemistry Sofia Bulgaria Chinese Academy of Sciences Institute of Biophysics Beijing China Novartis Pharma AG Preclinical Research Basel Switzerland Department of Chemical Sciences Tata Institute of Fundamental Research Mumbai India Solid State Physics Div

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Ultrathin cobalt silicide layers formed by rapid thermal processing of metal on amorphous silicon

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Journal of Vacuum science & Technology B: Microelectronics Processing and Phenomena 1997年第4期15卷 899-899页

作者： Kamal, A.H.M. Rack, M.J. Kozicki, M.N. Ferry, D.K. Lutzen, J. Hallmark, J.A. Center for Solid State Electronics Research Arizona State University Tempe Arizona 85287-6206 Science and Engineering of Materials Program Arizona State University Tempe Arizona 85287-1704 Phoenix Corporate Research Laboratories Motorola Inc. Tempe Arizona 85284

The formation of thin (<15 nm) cobalt silicide layers on amorphous silicon ( a-Si) has been investigated as a part of a program involving the fabrication of poly-Si-based single electron transistors. Rapid thermal annealing was used to promote the reaction between the a-Si and cobalt metal films. The effects of three most important factors on silicide formation during annealing (temperature, temperature ramp rate, and anneal time) were studied using both electrical (sheet resistance) and surface analysis (Auger electron spectroscopy) techniques. In particular, the impact of temperature ramp rate on silicide formation has been addressed. The optimization of the thin silicide process has been achieved by a statistical analysis. Transmission electron microscopy cross-sectional analysis has been performed to determine the thickness of the film.

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Simulations of metal thin film thermal flow processes

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Journal of Vacuum science & Technology B: Microelectronics Processing and Phenomena 1996年第4期14卷 2615-2615页

作者： Liao, Hung Cale, Timothy S. Department of Chemical Bio and Materials Engineering Center for Solid State Electronics Research Arizona State University Tempe Arizona 85287‐6006

We use EVFLOW, a thin film thermal flow process simulator, to simulate the thermal flow of metal thin films in axisymmetric contacts/vias on patterned wafers, where two dimensional surface evolution is appropriate. The flow processes considered are (1) Al and Au thin film laser melting processes, for which process temperatures are higher than the metal melting points, and (2) conventional Al thermal anneal processes (400–550 °C). Surface tension induced mass transport in the flowing films is calculated by solving the Navier–Stokes and continuity equations for incompressible fluids. Our simulations of Au film profiles during laser melting process predict the experimentally observed trends in void formation and collapse with feature geometry and deposited film thickness. In laser melting processes, the void shrinks and vanishes, resulting in fully filled contacts and planarized metal surfaces. Al film evolution in the thermal anneal process is modeled using a surface layer melting model. The thickness of the liquidlike flowing layer is assumed to be 0.02 μm in this work. The trends in the formation of voids with feature geometry and deposited film thickness predicted by EVFLOW reflect experimental observations. Voids may form during the thermal anneal processes. The surface layer melting model as used in this work will not predict the collapse of voids.

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Intermodulation analysis of FET resistive mixers using Volterra series

Intermodulation analysis of FET resistive mixers using Volte...

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Microwave, MTT-S International Symposium

作者： S. Peng P.J. McCleer G.I. Haddad Computer & Communication Research Laboratories Industrial Technology and Research Institute Taiwan Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan USA

We have implemented the Volterra-series method to analyze intermodulation (IM) distortion in FET resistive mixers. The nonlinearities of the channel conductance of a NE71000 MESFET and a NE32400 HFET were first characterized using a low-frequency harmonic power measurement. The data was then used in a simulation program and results for two-tone IM distortion in X-band were compared with the measured data for both MESFET and HFET resistive mixer circuits. Very good agreement was achieved in each case. We have also shown by simulation that the two separate contributions to the third-order IM distortion from the mixing between the input signals themselves and the mixing between the input signals and the second-order mixing products have a very strong cancellation, which results in the low IM distortion in the FET resistive mixers observed in measurements.

关键词： FETs Harmonic analysis Intrusion detection HEMTs MODFETs Distortion measurement Frequency MESFETs Power system harmonics Power measurement

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The investigation of custom grown vertical zone melt semi-insulating bulk gallium arsenide as a radiation spectrometer

The investigation of custom grown vertical zone melt semi-in...

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IEEE Symposium on Nuclear science (NSS/MIC)

作者： D.S. McGregor A.J. Antolak H.C. Chui E.S. Cross Z.-Q. Fang M.S. Goorsky R.L. Henry D.C. Look M.G. Mier D.H. Morse P.E.R. Nordquist R.W. Olsen M. Pocha M. Schieber T.E. Schlesinger E. Soria J.E. Toney H. Yoon C.L. Wang Sandia National Laboratories Livermore CA USA Sandia National Laboratories Albuquerque NM USA University Research Center Wright State University Dayton OH USA Department of Materials Science and Engineering UCLA Los Angeles CA USA Naval Research Laboratory Inc. Washington D.C. DC USA Solid State Electronics Laboratory Dayton OH USA Lawrence Livemore National Laboratory Livermore CA USA MS-9162 Sandia National Laboratories Livermore CA USA Department of Electrical and Computer Engineering Carnegie Mellon University Pittsburgh PA USA Detectronix Livermore CA USA

Vertical zone melt (VZM) bulk GaAs ingots have been zone refined (ZR) and zone leveled (ZL) to reduce EL2 deep donor levels and impurity concentrations with the intent of improving properties for gamma ray detectors. ZR and ZL GaAs ingots had background impurity levels and deep donor EL2 concentrations near or below detectable limits. The crystallinity of the material was slightly superior to commercial liquid encapsulated Czochralski (LEC) material, and nearly equivalent to commercial vertical gradient freeze (VGF) material. However, the homogeneity of the electrical properties for the ZL and ZR VZM material was inferior to commercially available material. Resulting gamma ray spectra was poor from detectors fabricated with the ZL or ZR VZM material.

关键词： Gallium arsenide Crystalline materials Impurities Laboratories Zirconium Refining Spectroscopy Gamma ray detectors Crystallization Voltage

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